N-channel transistor AP88N30W, 48A, 48A, 200uA, 48m Ohms, TO-3P ( TO-218 SOT-93 ), TO-3P, 300V. ID (T=100°C): 48A. ID (T=25°C): 48A. Idss (max): 200uA. On-resistance Rds On: 48m Ohms. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Voltage Vds(max): 300V. Assembly/installation: PCB through-hole mounting. C(in): 8440pF. Channel type: N. Cost): 1775pF. Drain-source protection: yes. Function: High-speed switching. G-S Protection: no. Gate/source voltage Vgs: 30 v. IDss (min): 1uA. Id(imp): 160A. Marking on the case: 88N30W. Number of terminals: 3. Operating temperature: -55°C...+150°C. Pd (Power Dissipation, Max): 312W. Quantity per case: 1. RoHS: yes. Td(off): 220 ns. Td(on): 50 ns. Technology: 'Enhancement-mode Power MOSFET'. Trr Diode (Min.): 300 ns. Type of transistor: MOSFET. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V. Original product from manufacturer: Advanced Power. Quantity in stock updated on 10/31/2025, 09:25