N-channel transistor IXTQ88N30P, 75A, 88A, 1mA, 40m Ohms, TO-3P ( TO-218 SOT-93 ), TO-3P, 300V

N-channel transistor IXTQ88N30P, 75A, 88A, 1mA, 40m Ohms, TO-3P ( TO-218 SOT-93 ), TO-3P, 300V

Quantity
Unit price
1-4
13.38$
5-14
12.39$
15-29
11.66$
30+
10.93$
Quantity in stock: 36

N-channel transistor IXTQ88N30P, 75A, 88A, 1mA, 40m Ohms, TO-3P ( TO-218 SOT-93 ), TO-3P, 300V. ID (T=100°C): 75A. ID (T=25°C): 88A. Idss (max): 1mA. On-resistance Rds On: 40m Ohms. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Voltage Vds(max): 300V. Assembly/installation: PCB through-hole mounting. C(in): 6300pF. Channel type: N. Cost): 950pF. Drain-source protection: diode. Function: N-Channel Enhancement Mode. G-S Protection: no. Gate/source voltage Vgs: 20V. IDss (min): 100uA. Id(imp): 220A. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 600W. Quantity per case: 1. RoHS: yes. Td(off): 96 ns. Td(on): 25 ns. Technology: PolarHT Power MOSFET. Trr Diode (Min.): 250 ns. Type of transistor: MOSFET. Vgs(th) max.: 5V. Vgs(th) min.: 2.5V. Original product from manufacturer: IXYS. Quantity in stock updated on 10/31/2025, 07:04

Technical documentation (PDF)
IXTQ88N30P
30 parameters
ID (T=100°C)
75A
ID (T=25°C)
88A
Idss (max)
1mA
On-resistance Rds On
40m Ohms
Housing
TO-3P ( TO-218 SOT-93 )
Housing (according to data sheet)
TO-3P
Voltage Vds(max)
300V
Assembly/installation
PCB through-hole mounting
C(in)
6300pF
Channel type
N
Cost)
950pF
Drain-source protection
diode
Function
N-Channel Enhancement Mode
G-S Protection
no
Gate/source voltage Vgs
20V
IDss (min)
100uA
Id(imp)
220A
Number of terminals
3
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
600W
Quantity per case
1
RoHS
yes
Td(off)
96 ns
Td(on)
25 ns
Technology
PolarHT Power MOSFET
Trr Diode (Min.)
250 ns
Type of transistor
MOSFET
Vgs(th) max.
5V
Vgs(th) min.
2.5V
Original product from manufacturer
IXYS