Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 3.51$ | 3.51$ |
5 - 9 | 3.34$ | 3.34$ |
10 - 24 | 3.16$ | 3.16$ |
25 - 49 | 2.99$ | 2.99$ |
50 - 62 | 2.92$ | 2.92$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 3.51$ | 3.51$ |
5 - 9 | 3.34$ | 3.34$ |
10 - 24 | 3.16$ | 3.16$ |
25 - 49 | 2.99$ | 2.99$ |
50 - 62 | 2.92$ | 2.92$ |
N-channel transistor, 24A, 28A, 25uA, 25m Ohms, TO-251 ( I-Pak ), TO-251 ( I-Pak ), 30 v - AP40T03GJ. N-channel transistor, 24A, 28A, 25uA, 25m Ohms, TO-251 ( I-Pak ), TO-251 ( I-Pak ), 30 v. ID (T=100°C): 24A. ID (T=25°C): 28A. Idss (max): 25uA. On-resistance Rds On: 25m Ohms. Housing: TO-251 ( I-Pak ). Housing (according to data sheet): TO-251 ( I-Pak ). Voltage Vds(max): 30 v. C(in): 655pF. Cost): 145pF. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 95A. IDss (min): 1uA. Marking on the case: 40T03 GP. Number of terminals: 3. Pd (Power Dissipation, Max): 31.25W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 16 ns. Td(on): 6 ns. Technology: ENHANCEMENT MODE POWER MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 25V. Vgs(th) max.: 3V. Vgs(th) min.: 1V. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 26/04/2025, 16:25.
Information and technical help
Payment and delivery
Delivery in 2-3 days, with postal tracking!
All rights reserved, RPtronics, 2024.