Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 1.34$ | 1.34$ |
5 - 9 | 1.28$ | 1.28$ |
10 - 24 | 1.21$ | 1.21$ |
25 - 49 | 1.14$ | 1.14$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 1.34$ | 1.34$ |
5 - 9 | 1.28$ | 1.28$ |
10 - 24 | 1.21$ | 1.21$ |
25 - 49 | 1.14$ | 1.14$ |
N-channel transistor, 115A, 150A, 5uA, 1.9m Ohms, PowerPAK SO-8, PowerSO-8 ( DFN5X6 ), 30 v - AON6512. N-channel transistor, 115A, 150A, 5uA, 1.9m Ohms, PowerPAK SO-8, PowerSO-8 ( DFN5X6 ), 30 v. ID (T=100°C): 115A. ID (T=25°C): 150A. Idss (max): 5uA. On-resistance Rds On: 1.9m Ohms. Housing: PowerPAK SO-8. Housing (according to data sheet): PowerSO-8 ( DFN5X6 ). Voltage Vds(max): 30 v. C(in): 3430pF. Cost): 1327pF. Channel type: N. Trr Diode (Min.): 22 ns. Type of transistor: MOSFET. Id(imp): 340A. IDss (min): 1uA. Number of terminals: 8. Pd (Power Dissipation, Max): 83W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 33.8 ns. Td(on): 7.5 ns. Technology: 'Latest Trench Power AlphaMOS technology'. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 2V. Vgs(th) min.: 1V. Function: Idsm--54A/25°C, Idsm--43A/70°C. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 26/04/2025, 16:25.
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