N-channel transistor 2SK3936, 23A, 500uA, 0.20 Ohms, TO-3PN ( 2-16C1B ), TO-3P, 500V

N-channel transistor 2SK3936, 23A, 500uA, 0.20 Ohms, TO-3PN ( 2-16C1B ), TO-3P, 500V

Quantity
Unit price
1-4
17.60$
5-9
16.99$
10-24
16.47$
25-49
15.82$
50+
15.31$
Obsolete product, soon to be removed from the catalog
Out of stock
Equivalence available

N-channel transistor 2SK3936, 23A, 500uA, 0.20 Ohms, TO-3PN ( 2-16C1B ), TO-3P, 500V. ID (T=25°C): 23A. Idss (max): 500uA. On-resistance Rds On: 0.20 Ohms. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3P. Voltage Vds(max): 500V. Assembly/installation: PCB through-hole mounting. C(in): 4250pF. Channel type: N. Cost): 420pF. Drain-source protection: diode. Function: Switching Regulator. G-S Protection: yes. Gate/emitter voltage VGE(th)max.: 4 v. Gate/source voltage Vgs: 30 v. Id(imp): 92A. Number of terminals: 3. Pd (Power Dissipation, Max): 150W. Quantity per case: 1. RoHS: yes. Td(off): 80 ns. Td(on): 45 ns. Technology: Field Effect MOS Type(MACH-II-MOS VI). Temperature: +150°C. Trr Diode (Min.): 380 ns. Type of transistor: MOSFET. Vgs(th) min.: 2V. Original product from manufacturer: Toshiba. Quantity in stock updated on 10/31/2025, 09:25

Technical documentation (PDF)
2SK3936
28 parameters
ID (T=25°C)
23A
Idss (max)
500uA
On-resistance Rds On
0.20 Ohms
Housing
TO-3PN ( 2-16C1B )
Housing (according to data sheet)
TO-3P
Voltage Vds(max)
500V
Assembly/installation
PCB through-hole mounting
C(in)
4250pF
Channel type
N
Cost)
420pF
Drain-source protection
diode
Function
Switching Regulator
G-S Protection
yes
Gate/emitter voltage VGE(th)max.
4 v
Gate/source voltage Vgs
30 v
Id(imp)
92A
Number of terminals
3
Pd (Power Dissipation, Max)
150W
Quantity per case
1
RoHS
yes
Td(off)
80 ns
Td(on)
45 ns
Technology
Field Effect MOS Type(MACH-II-MOS VI)
Temperature
+150°C
Trr Diode (Min.)
380 ns
Type of transistor
MOSFET
Vgs(th) min.
2V
Original product from manufacturer
Toshiba

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