N-channel transistor STW20NK50Z, TO-247, 500V, 12.6A, 20A, 50uA, 0.23 Ohms, TO-247, 500V. Housing: TO-247. Housing (JEDEC standard): -. Drain-source voltage Uds [V]: 500V. ID (T=100°C): 12.6A. ID (T=25°C): 20A. Idss (max): 50uA. On-resistance Rds On: 0.23 Ohms. Housing (according to data sheet): TO-247. Voltage Vds(max): 500V. Assembly/installation: PCB through-hole mounting. C(in): 2600pF. Channel type: N. Ciss Gate Capacitance [pF]: 2600pF. Component family: MOSFET, N-MOS. Conditioning unit: 30. Conditioning: tubus. Configuration: PCB through-hole mounting. Cost): 328pF. Drain current Id (A) @ 25°C: 17A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.27 Ohms @ 8.5A. Drain current: 17A, 12.6A. Drain-source protection: yes. Drain-source voltage: 500V. G-S Protection: yes. Gate breakdown voltage Ugs [V]: 4.5V. Gate-source voltage: ±30V. Gate/source voltage Vgs: 30 v. IDss (min): 1uA. Id(imp): 68A. Manufacturer's marking: W20NK50Z. Marking on the case: W20NK50Z. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 190W. Number of terminals: 3. Number of terminals: 3. Pd (Power Dissipation, Max): 190W. Polarity: unipolar. Power: 190W. Properties of semiconductor: ESD protected. Quantity per case: 1. RoHS: yes. Switch-off delay tf[nsec.]: 70 ns. Switch-on time ton [nsec.]: 28 ns. Td(off): 70 ns. Td(on): 28 ns. Technology: SuperMESH™ Power MOSFET Zener-protected. Temperature: +150°C. Trr Diode (Min.): 355 ns. Type of transistor: MOSFET. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V. Original product from manufacturer: Stmicroelectronics. Quantity in stock updated on 10/31/2025, 08:58