N-channel transistor 2SK3878, 5.3A, 9A, 100uA, 1 Ohm, TO-3P ( TO-218 SOT-93 ), TO-3P, 900V. ID (T=100°C): 5.3A. ID (T=25°C): 9A. Idss (max): 100uA. On-resistance Rds On: 1 Ohm. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Voltage Vds(max): 900V. Assembly/installation: PCB through-hole mounting. C(in): 2200pF. Channel type: N. Conditioning unit: 25. Conditioning: plastic tube. Cost): 45pF. Drain-source protection: diode. Function: Switching Regulator Applications. G-S Protection: yes. Gate/source voltage Vgs: 30 v. IDss (min): 1uA. Id(imp): 27A. Marking on the case: K3878. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 150W. Quantity per case: 1. RoHS: yes. Spec info: Vth=2.0 to 4.0V (VDS=10V, ID=1mA). Td(off): 120ns. Td(on): 65 ns. Trr Diode (Min.): 1.4us. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: Toshiba. Quantity in stock updated on 10/31/2025, 09:25