N-channel transistor 2SK3679, 9A, 250uA, 1.22 Ohms, TO-220FP, TO-220F, 900V. ID (T=25°C): 9A. Idss (max): 250uA. On-resistance Rds On: 1.22 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 900V. Assembly/installation: PCB through-hole mounting. C(in): 1100pF. Channel type: N. Cost): 140pF. Drain-source protection: yes. Function: High Speed ​​Switching. G-S Protection: no. Gate/source voltage Vgs: 30 v. IDss (min): 25uA. Id(imp): 36A. Marking on the case: K3679. Number of terminals: 3. Pd (Power Dissipation, Max): 95W. Quantity per case: 1. RoHS: yes. Td(off): 50 ns. Td(on): 25 ns. Technology: POWER MOSFET Super FAP-G Series. Temperature: +150°C. Trr Diode (Min.): 3.2us. Type of transistor: MOSFET. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Original product from manufacturer: Fuji Electric. Quantity in stock updated on 10/31/2025, 09:25