N-channel transistor FQPF9N90C, 2.8A, 8A, 10uA, 1.12 Ohms, TO-220FP, TO-220F, 900V

N-channel transistor FQPF9N90C, 2.8A, 8A, 10uA, 1.12 Ohms, TO-220FP, TO-220F, 900V

Quantity
Unit price
1-4
3.52$
5-24
3.19$
25-49
2.90$
50-99
2.70$
100+
2.31$
Quantity in stock: 66

N-channel transistor FQPF9N90C, 2.8A, 8A, 10uA, 1.12 Ohms, TO-220FP, TO-220F, 900V. ID (T=100°C): 2.8A. ID (T=25°C): 8A. Idss (max): 10uA. On-resistance Rds On: 1.12 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 900V. Assembly/installation: PCB through-hole mounting. C(in): 2100pF. Channel type: N. Cost): 175pF. Drain-source protection: diode. Function: Fast switch, Low gate charge 40nC, Low Crss 14pF. G-S Protection: no. Gate/source voltage Vgs: 30 v. IDss (min): 10uA. Id(imp): 32A. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 68W. Quantity per case: 1. RoHS: yes. Spec info: Zero Gate Voltage Drain Current. Td(off): 100 ns. Td(on): 50 ns. Technology: DMOS, QFET. Trr Diode (Min.): 550 ns. Type of transistor: MOSFET. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Original product from manufacturer: Fairchild. Quantity in stock updated on 10/31/2025, 06:37

Technical documentation (PDF)
FQPF9N90C
31 parameters
ID (T=100°C)
2.8A
ID (T=25°C)
8A
Idss (max)
10uA
On-resistance Rds On
1.12 Ohms
Housing
TO-220FP
Housing (according to data sheet)
TO-220F
Voltage Vds(max)
900V
Assembly/installation
PCB through-hole mounting
C(in)
2100pF
Channel type
N
Cost)
175pF
Drain-source protection
diode
Function
Fast switch, Low gate charge 40nC, Low Crss 14pF
G-S Protection
no
Gate/source voltage Vgs
30 v
IDss (min)
10uA
Id(imp)
32A
Number of terminals
3
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
68W
Quantity per case
1
RoHS
yes
Spec info
Zero Gate Voltage Drain Current
Td(off)
100 ns
Td(on)
50 ns
Technology
DMOS, QFET
Trr Diode (Min.)
550 ns
Type of transistor
MOSFET
Vgs(th) max.
5V
Vgs(th) min.
3V
Original product from manufacturer
Fairchild