N-channel transistor 2SK3561, 8A, 8A, 100uA, 0.75 Ohms, TO-220FP, TO-220F, 500V

N-channel transistor 2SK3561, 8A, 8A, 100uA, 0.75 Ohms, TO-220FP, TO-220F, 500V

Quantity
Unit price
1-4
2.49$
5-24
2.17$
25-49
1.96$
50+
1.77$
Equivalence available
Quantity in stock: 35

N-channel transistor 2SK3561, 8A, 8A, 100uA, 0.75 Ohms, TO-220FP, TO-220F, 500V. ID (T=100°C): 8A. ID (T=25°C): 8A. Idss (max): 100uA. On-resistance Rds On: 0.75 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 500V. Assembly/installation: PCB through-hole mounting. C(in): 1050pF. Channel type: N. Cost): 110pF. Drain-source protection: diode. Function: Switching Mode Power Supplies (SMPS). G-S Protection: yes. Gate/source voltage Vgs: 30 v. Id(imp): 32A. Marking on the case: K3561. Number of terminals: 3. Pd (Power Dissipation, Max): 40W. Quantity per case: 1. RoHS: yes. Td(off): 38 ns. Td(on): 26 ns. Technology: Field Effect (TT-MOSVI). Temperature: +150°C. Trr Diode (Min.): 1200 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: Toshiba. Quantity in stock updated on 10/31/2025, 09:31

Technical documentation (PDF)
2SK3561
30 parameters
ID (T=100°C)
8A
ID (T=25°C)
8A
Idss (max)
100uA
On-resistance Rds On
0.75 Ohms
Housing
TO-220FP
Housing (according to data sheet)
TO-220F
Voltage Vds(max)
500V
Assembly/installation
PCB through-hole mounting
C(in)
1050pF
Channel type
N
Cost)
110pF
Drain-source protection
diode
Function
Switching Mode Power Supplies (SMPS)
G-S Protection
yes
Gate/source voltage Vgs
30 v
Id(imp)
32A
Marking on the case
K3561
Number of terminals
3
Pd (Power Dissipation, Max)
40W
Quantity per case
1
RoHS
yes
Td(off)
38 ns
Td(on)
26 ns
Technology
Field Effect (TT-MOSVI)
Temperature
+150°C
Trr Diode (Min.)
1200 ns
Type of transistor
MOSFET
Vgs(th) max.
4 v
Vgs(th) min.
2V
Original product from manufacturer
Toshiba

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