N-channel transistor IRFI840G, 500V, 0.85 Ohms, TO-220FP, 2.9A, 4.6A, 250uA, TO-220F, 500V. Drain-source voltage (Vds): 500V. On-resistance Rds On: 0.85 Ohms. Housing: TO-220FP. ID (T=100°C): 2.9A. ID (T=25°C): 4.6A. Idss (max): 250uA. Housing (according to data sheet): TO-220F. Voltage Vds(max): 500V. Assembly/installation: PCB through-hole mounting. C(in): 1300pF. Channel type: N. Cost): 200pF. Drain-source protection: zener diode. G-S Protection: diode. Gate/source voltage Vgs: 20V. IDss (min): 25uA. Id(imp): 18A. Max drain current: 4.6A. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 40W. Quantity per case: 1. RoHS: yes. Td(off): 55 ns. Td(on): 14 ns. Technology: HEXFET Power MOSFET. Trr Diode (Min.): 340 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: International Rectifier. Quantity in stock updated on 10/31/2025, 09:37