N-channel transistor 2SK3176, n/a, 30A, 100uA, 38m Ohms, TO-3PN ( 2-16C1B ), 2-16C1B, 200V

N-channel transistor 2SK3176, n/a, 30A, 100uA, 38m Ohms, TO-3PN ( 2-16C1B ), 2-16C1B, 200V

Quantity
Unit price
1-4
7.03$
5-24
6.40$
25-49
5.89$
50+
5.47$
Equivalence available
Quantity in stock: 42

N-channel transistor 2SK3176, n/a, 30A, 100uA, 38m Ohms, TO-3PN ( 2-16C1B ), 2-16C1B, 200V. ID (T=100°C): n/a. ID (T=25°C): 30A. Idss (max): 100uA. On-resistance Rds On: 38m Ohms. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): 2-16C1B. Voltage Vds(max): 200V. Assembly/installation: PCB through-hole mounting. C(in): 5400pF. Channel type: N. Cost): 1900pF. Drain-source protection: yes. Function: Switching mode Regulator, DC-DC Converter, Motor Driver. G-S Protection: yes. Gate/source voltage Vgs: 20V. IDss (min): 10uA. Id(imp): 60.4k Ohms. Number of terminals: 3. Operating temperature: -...+150°C. Pd (Power Dissipation, Max): 150W. Quantity per case: 1. RoHS: yes. Td(off): 190 ns. Td(on): 55 ns. Technology: Field Effect Transistor MOS-V. Trr Diode (Min.): 270 ns. Type of transistor: MOSFET. Vgs(th) max.: 3.5V. Vgs(th) min.: 1.5V. Original product from manufacturer: Toshiba. Quantity in stock updated on 10/31/2025, 09:31

Technical documentation (PDF)
2SK3176
29 parameters
ID (T=25°C)
30A
Idss (max)
100uA
On-resistance Rds On
38m Ohms
Housing
TO-3PN ( 2-16C1B )
Housing (according to data sheet)
2-16C1B
Voltage Vds(max)
200V
Assembly/installation
PCB through-hole mounting
C(in)
5400pF
Channel type
N
Cost)
1900pF
Drain-source protection
yes
Function
Switching mode Regulator, DC-DC Converter, Motor Driver
G-S Protection
yes
Gate/source voltage Vgs
20V
IDss (min)
10uA
Id(imp)
60.4k Ohms
Number of terminals
3
Operating temperature
-...+150°C
Pd (Power Dissipation, Max)
150W
Quantity per case
1
RoHS
yes
Td(off)
190 ns
Td(on)
55 ns
Technology
Field Effect Transistor MOS-V
Trr Diode (Min.)
270 ns
Type of transistor
MOSFET
Vgs(th) max.
3.5V
Vgs(th) min.
1.5V
Original product from manufacturer
Toshiba

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