N-channel transistor IRFP250N, 21A, 30A, 250uA, 0.075 Ohms, TO-247, TO-247AC, 200V

N-channel transistor IRFP250N, 21A, 30A, 250uA, 0.075 Ohms, TO-247, TO-247AC, 200V

Quantity
Unit price
1-4
3.68$
5-24
3.30$
25-49
3.08$
50-99
2.89$
100+
2.60$
Quantity in stock: 105

N-channel transistor IRFP250N, 21A, 30A, 250uA, 0.075 Ohms, TO-247, TO-247AC, 200V. ID (T=100°C): 21A. ID (T=25°C): 30A. Idss (max): 250uA. On-resistance Rds On: 0.075 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 200V. Assembly/installation: PCB through-hole mounting. C(in): 2159pF. Channel type: N. Conditioning unit: 25. Conditioning: plastic tube. Cost): 315pF. Drain-source protection: zener diode. Function: High-speed switching. G-S Protection: no. Gate/source voltage Vgs: 20V. IDss (min): 25uA. Id(imp): 60.4k Ohms. Number of terminals: 3. Operating temperature: -55...+175°C. Pd (Power Dissipation, Max): 214W. Quantity per case: 1. RoHS: yes. Td(off): 41 ns. Td(on): 14 ns. Technology: HEXFET Power MOSFET. Trr Diode (Min.): 186 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: International Rectifier. Quantity in stock updated on 10/31/2025, 09:37

Technical documentation (PDF)
IRFP250N
32 parameters
ID (T=100°C)
21A
ID (T=25°C)
30A
Idss (max)
250uA
On-resistance Rds On
0.075 Ohms
Housing
TO-247
Housing (according to data sheet)
TO-247AC
Voltage Vds(max)
200V
Assembly/installation
PCB through-hole mounting
C(in)
2159pF
Channel type
N
Conditioning unit
25
Conditioning
plastic tube
Cost)
315pF
Drain-source protection
zener diode
Function
High-speed switching
G-S Protection
no
Gate/source voltage Vgs
20V
IDss (min)
25uA
Id(imp)
60.4k Ohms
Number of terminals
3
Operating temperature
-55...+175°C
Pd (Power Dissipation, Max)
214W
Quantity per case
1
RoHS
yes
Td(off)
41 ns
Td(on)
14 ns
Technology
HEXFET Power MOSFET
Trr Diode (Min.)
186 ns
Type of transistor
MOSFET
Vgs(th) max.
4 v
Vgs(th) min.
2V
Original product from manufacturer
International Rectifier