N-channel transistor 2SK2717, 5A, 100uA, 2.3 Ohms, TO-220FP, TO-220F, 900V. ID (T=25°C): 5A. Idss (max): 100uA. On-resistance Rds On: 2.3 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 900V. Assembly/installation: PCB through-hole mounting. C(in): 1200pF. Channel type: N. Cost): 20pF. Drain-source protection: diode. Function: High speed, High Voltage Switching, DC/DC Converters. G-S Protection: yes. Gate/source voltage Vgs: 30 v. Id(imp): 15A. Marking on the case: K2717. Number of terminals: 3. Pd (Power Dissipation, Max): 45W. Quantity per case: 1. RoHS: yes. Td(off): 200 ns. Td(on): 90 ns. Technology: Field Effect Transistor. Temperature: +150°C. Trr Diode (Min.): 1300 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: Toshiba. Quantity in stock updated on 10/31/2025, 09:31