N-channel transistor 2SK2651, 3A, 6A, 500uA, 1.78 Ohms, TO-220FP, TO-220F15, 900V

N-channel transistor 2SK2651, 3A, 6A, 500uA, 1.78 Ohms, TO-220FP, TO-220F15, 900V

Quantity
Unit price
1-4
4.21$
5-24
3.91$
25-49
3.67$
50+
3.46$
Quantity in stock: 26

N-channel transistor 2SK2651, 3A, 6A, 500uA, 1.78 Ohms, TO-220FP, TO-220F15, 900V. ID (T=100°C): 3A. ID (T=25°C): 6A. Idss (max): 500uA. On-resistance Rds On: 1.78 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F15. Voltage Vds(max): 900V. Assembly/installation: PCB through-hole mounting. C(in): 900pF. Channel type: N. Cost): 130pF. Drain-source protection: yes. Function: High Speed ​​Switching. G-S Protection: no. Gate/source voltage Vgs: 30 v. IDss (min): 10uA. Id(imp): 24A. Operating temperature: -...+150°C. Pd (Power Dissipation, Max): 50W. Quantity per case: 1. Td(off): 70 ns. Td(on): 25 ns. Technology: FAP-IIS Series. Type of transistor: MOSFET. Vgs(th) max.: 4.5V. Vgs(th) min.: 3.5V. Original product from manufacturer: Fuji Electric. Quantity in stock updated on 10/31/2025, 09:31

Technical documentation (PDF)
2SK2651
27 parameters
ID (T=100°C)
3A
ID (T=25°C)
6A
Idss (max)
500uA
On-resistance Rds On
1.78 Ohms
Housing
TO-220FP
Housing (according to data sheet)
TO-220F15
Voltage Vds(max)
900V
Assembly/installation
PCB through-hole mounting
C(in)
900pF
Channel type
N
Cost)
130pF
Drain-source protection
yes
Function
High Speed ​​Switching
G-S Protection
no
Gate/source voltage Vgs
30 v
IDss (min)
10uA
Id(imp)
24A
Operating temperature
-...+150°C
Pd (Power Dissipation, Max)
50W
Quantity per case
1
Td(off)
70 ns
Td(on)
25 ns
Technology
FAP-IIS Series
Type of transistor
MOSFET
Vgs(th) max.
4.5V
Vgs(th) min.
3.5V
Original product from manufacturer
Fuji Electric