N-channel transistor 2SK2700, 3A, 100uA, 3.7 Ohms, TO-220FP, TO-220F, 900V. ID (T=25°C): 3A. Idss (max): 100uA. On-resistance Rds On: 3.7 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 900V. Assembly/installation: PCB through-hole mounting. C(in): 750pF. Channel type: N. Cost): 70pF. Drain-source protection: diode. Function: High speed, High Voltage Switching, DC/DC Converters. G-S Protection: yes. Gate/source voltage Vgs: 30 v. Id(imp): 9A. Marking on the case: K2700. Number of terminals: 3. Pd (Power Dissipation, Max): 40W. Quantity per case: 1. Td(off): 110 ns. Td(on): 55 ns. Technology: Field Effect Transistor. Temperature: +150°C. Trr Diode (Min.): 1100 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: Toshiba. Quantity in stock updated on 10/31/2025, 09:31