N-channel transistor 2SK2640, 10A, 10A, 200uA, 0.73 Ohms, TO-220FP, TO-220F15, 500V

N-channel transistor 2SK2640, 10A, 10A, 200uA, 0.73 Ohms, TO-220FP, TO-220F15, 500V

Quantity
Unit price
1-4
9.21$
5-9
8.53$
10-24
8.07$
25+
7.61$
Obsolete product, soon to be removed from the catalog
Out of stock
Equivalence available

N-channel transistor 2SK2640, 10A, 10A, 200uA, 0.73 Ohms, TO-220FP, TO-220F15, 500V. ID (T=100°C): 10A. ID (T=25°C): 10A. Idss (max): 200uA. On-resistance Rds On: 0.73 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F15. Voltage Vds(max): 500V. Assembly/installation: PCB through-hole mounting. C(in): 950pF. Channel type: N. Cost): 180pF. Drain-source protection: diode. Function: High Speed ​​Switching. G-S Protection: no. Gate/source voltage Vgs: 30 v. IDss (min): 10uA. Id(imp): 40A. Marking on the case: K2640. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 50W. Quantity per case: 1. RoHS: yes. Td(off): 70 ns. Td(on): 25 ns. Technology: FAP-IIS Series MOS-FET. Trr Diode (Min.): 450 ns. Type of transistor: MOSFET. Vgs(th) min.: 3.5V. Original product from manufacturer: Fuji Electric. Quantity in stock updated on 10/31/2025, 09:31

Technical documentation (PDF)
2SK2640
30 parameters
ID (T=100°C)
10A
ID (T=25°C)
10A
Idss (max)
200uA
On-resistance Rds On
0.73 Ohms
Housing
TO-220FP
Housing (according to data sheet)
TO-220F15
Voltage Vds(max)
500V
Assembly/installation
PCB through-hole mounting
C(in)
950pF
Channel type
N
Cost)
180pF
Drain-source protection
diode
Function
High Speed ​​Switching
G-S Protection
no
Gate/source voltage Vgs
30 v
IDss (min)
10uA
Id(imp)
40A
Marking on the case
K2640
Number of terminals
3
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
50W
Quantity per case
1
RoHS
yes
Td(off)
70 ns
Td(on)
25 ns
Technology
FAP-IIS Series MOS-FET
Trr Diode (Min.)
450 ns
Type of transistor
MOSFET
Vgs(th) min.
3.5V
Original product from manufacturer
Fuji Electric

Equivalent products and/or accessories for 2SK2640