N-channel transistor STF11NM60ND, 6.3A, 10A, 100uA, 0.37 Ohms, TO-220FP, TO-220FP, 600V. ID (T=100°C): 6.3A. ID (T=25°C): 10A. Idss (max): 100uA. On-resistance Rds On: 0.37 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 600V. Assembly/installation: PCB through-hole mounting. C(in): 850pF. Channel type: N. Conditioning unit: 50. Conditioning: plastic tube. Cost): 44pF. Drain-source protection: yes. Function: LOW INPUT CAPACITANCE, RESISTANCE AND GATE CHARGE. G-S Protection: no. Gate/source voltage Vgs: 25V. IDss (min): 1uA. Id(imp): 40A. Marking on the case: 11NM60ND. Number of terminals: 3. Pd (Power Dissipation, Max): 25W. Quantity per case: 1. RoHS: yes. Spec info: HIGH dv/dt AND AVALANCHE CAPABILITIES. Td(off): 50 ns. Td(on): 16 ns. Technology: MDmesh II POWER MOSFET. Temperature: +150°C. Trr Diode (Min.): 130 ns. Type of transistor: MOSFET. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Original product from manufacturer: Stmicroelectronics. Quantity in stock updated on 10/31/2025, 06:54