| Quantity in stock: 77 |
N-channel transistor 2SK2632LS, 1.3A, 2.5A, 1mV, 3.6 Ohms, TO-220FP, TO-220FI-LS, 800V
Quantity
Unit price
1-4
3.75$
5-9
3.45$
10-24
3.22$
25-49
3.03$
50+
2.70$
| Equivalence available | |
| Quantity in stock: 2 |
N-channel transistor 2SK2632LS, 1.3A, 2.5A, 1mV, 3.6 Ohms, TO-220FP, TO-220FI-LS, 800V. ID (T=100°C): 1.3A. ID (T=25°C): 2.5A. Idss (max): 1mV. On-resistance Rds On: 3.6 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220FI-LS. Voltage Vds(max): 800V. Assembly/installation: PCB through-hole mounting. C(in): 550pF. Channel type: N. Cost): 150pF. Drain-source protection: yes. Function: Ultrahigh-Speed Switching Applications. Gate/source voltage (off) max.: 5.5V. Gate/source voltage (off) min.: 3.5V. Gate/source voltage Vgs: 30 v. Germanium diode: no. IDss (min): -. Pd (Power Dissipation, Max): 25W. Quantity per case: 1. Td(off): 45 ns. Td(on): 15 ns. Technology: V-MOS (F). Type of transistor: MOSFET. Original product from manufacturer: Sanyo. Quantity in stock updated on 10/31/2025, 09:31
2SK2632LS
24 parameters
ID (T=100°C)
1.3A
ID (T=25°C)
2.5A
Idss (max)
1mV
On-resistance Rds On
3.6 Ohms
Housing
TO-220FP
Housing (according to data sheet)
TO-220FI-LS
Voltage Vds(max)
800V
Assembly/installation
PCB through-hole mounting
C(in)
550pF
Channel type
N
Cost)
150pF
Drain-source protection
yes
Function
Ultrahigh-Speed Switching Applications
Gate/source voltage (off) max.
5.5V
Gate/source voltage (off) min.
3.5V
Gate/source voltage Vgs
30 v
Germanium diode
no
Pd (Power Dissipation, Max)
25W
Quantity per case
1
Td(off)
45 ns
Td(on)
15 ns
Technology
V-MOS (F)
Type of transistor
MOSFET
Original product from manufacturer
Sanyo
Equivalent products and/or accessories for 2SK2632LS
| +2500 rapidement | |
| Obsolete | |
| Out of stock | |
| Replacement | |
| Notif | |
| 12 in stock | |
| x2 |