N-channel transistor 2SK2611, 9A, 100uA, 1.1 Ohms, TO-3PN ( 2-16C1B ), 2-16C1B, 900V. ID (T=25°C): 9A. Idss (max): 100uA. On-resistance Rds On: 1.1 Ohms. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): 2-16C1B. Voltage Vds(max): 900V. Assembly/installation: surface-mounted component (SMD). C(in): 2040pF. Channel type: N. Cost): 190pF. Drain-source protection: yes. Function: High Speed, H.V. G-S Protection: yes. Gate/source voltage Vgs: 30 v. Id(imp): 27A. Marking on the case: K2611. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 150W. Quantity per case: 1. RoHS: yes. Td(off): 95 ns. Td(on): 60 ns. Technology: Field Effect (TT-MOSIII). Temperature: +150°C. Trr Diode (Min.): 1.6us. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: Toshiba. Quantity in stock updated on 10/31/2025, 09:31