N-channel transistor 2SK2039, 3A, 5A, 300uA, 1.9 Ohms, TO-3PN ( 2-16C1B ), TO-3PN, 900V. ID (T=100°C): 3A. ID (T=25°C): 5A. Idss (max): 300uA. On-resistance Rds On: 1.9 Ohms. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PN. Voltage Vds(max): 900V. Assembly/installation: PCB through-hole mounting. C(in): 690pF. Channel type: N. Cost): 120pF. Drain-source protection: diode. Function: High-Speed. G-S Protection: no. Gate/source voltage Vgs: 30 v. Id(imp): 15A. Number of terminals: 3. Pd (Power Dissipation, Max): 150W. Quantity per case: 1. RoHS: yes. Td(off): 210 ns. Td(on): 70 ns. Technology: V-MOS. Temperature: +150°C. Trr Diode (Min.): 1450 ns. Type of transistor: MOSFET. Vgs(th) max.: 3.5V. Vgs(th) min.: 1.5V. Original product from manufacturer: Toshiba. Quantity in stock updated on 10/31/2025, 09:31