N-channel transistor 2SK1120, TO-3PN ( 2-16C1B ), 1 kV, 8A, 300uA, 1.5 Ohms, 2-16C1B, 1000V. Housing: TO-3PN ( 2-16C1B ). Housing (JEDEC standard): -. Drain-source voltage Uds [V]: 1 kV. ID (T=25°C): 8A. Idss (max): 300uA. On-resistance Rds On: 1.5 Ohms. Housing (according to data sheet): 2-16C1B. Voltage Vds(max): 1000V. Assembly/installation: PCB through-hole mounting. C(in): 1300pF. Channel type: N. Ciss Gate Capacitance [pF]: 1300pF. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Cost): 180pF. Drain current Id (A) @ 25°C: 8A. Drain current through resistor Rds [Ohm] @ Ids [A]: 1.8 Ohms @ 4A. Drain-source protection: diode. Function: N MOSFET transistor. G-S Protection: no. Gate breakdown voltage Ugs [V]: 3.5V. Gate/emitter voltage VGE(th)max.: 3.5V. Gate/source voltage Vgs: 20V. Id(imp): 24A. Manufacturer's marking: K1120. Marking on the case: K1120. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 150W. Number of terminals: 3. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 150W. Quantity per case: 1. RoHS: yes. Spec info: DC-DC Converter and Motor Drive Application. Switch-off delay tf[nsec.]: 100 ns. Switch-on time ton [nsec.]: 40 ns. Td(off): 100 ns. Td(on): 40 ns. Technology: Silicon N Channel Mos. Type of transistor: MOSFET. Vgs(th) min.: 1.5V. Weight: 4.6g. Original product from manufacturer: Toshiba. Quantity in stock updated on 10/31/2025, 09:31