N-channel transistor 2SK1529, 10A, 1mA, TO-3P ( TO-218 SOT-93 ), 2-16C1B, 180V. ID (T=25°C): 10A. Idss (max): 1mA. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): 2-16C1B. Voltage Vds(max): 180V. Assembly/installation: PCB through-hole mounting. C(in): 700pF. Channel type: N. Cost): 150pF. Drain-source protection: no. Function: High Power Amplifier Application. G-S Protection: no. Gate/source voltage (off) max.: 2.8V. Gate/source voltage (off) min.: 0.8V. Gate/source voltage Vgs: 20V. IDss (min): -. Marking on the case: K1529. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 120W. Quantity per case: 1. RoHS: yes. Spec info: complementary transistor (pair) 2SJ200. Technology: Field Effect Silicon N-Channel MOS Type. Type of transistor: MOSFET. Original product from manufacturer: Toshiba. Quantity in stock updated on 10/31/2025, 09:31