N-channel transistor ECX10N20, 8A, 10mA, TO-247, TO-247, 200V

N-channel transistor ECX10N20, 8A, 10mA, TO-247, TO-247, 200V

Quantity
Unit price
1-9
10.31$
10-29
9.57$
30-59
9.20$
60-119
8.93$
120+
8.42$
Quantity in stock: 64

N-channel transistor ECX10N20, 8A, 10mA, TO-247, TO-247, 200V. ID (T=25°C): 8A. Idss (max): 10mA. Housing: TO-247. Housing (according to data sheet): TO-247. Voltage Vds(max): 200V. Assembly/installation: PCB through-hole mounting. C(in): 500pF. Channel type: N. Cost): 300pF. Drain-source protection: no. Function: AUDIO POWER Amplifier MOSFET. G-S Protection: no. Gate/source voltage (off) max.: 1.5V. Gate/source voltage (off) min.: 0.15V. Gate/source voltage Vgs: 14V. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 125W. Pinout: 1 - G, 2 - S, 3 - D. Quantity per case: 1. RoHS: yes. Spec info: complementary transistor (pair) ECX10P20. Td(off): 50 ns. Td(on): 100 ns. Technology: N–CHANNEL POWER MOSFET. Type of transistor: MOSFET. Various: HI-FI Power Amplifier. Original product from manufacturer: Exicon. Quantity in stock updated on 10/31/2025, 09:19

Technical documentation (PDF)
ECX10N20
28 parameters
ID (T=25°C)
8A
Idss (max)
10mA
Housing
TO-247
Housing (according to data sheet)
TO-247
Voltage Vds(max)
200V
Assembly/installation
PCB through-hole mounting
C(in)
500pF
Channel type
N
Cost)
300pF
Drain-source protection
no
Function
AUDIO POWER Amplifier MOSFET
G-S Protection
no
Gate/source voltage (off) max.
1.5V
Gate/source voltage (off) min.
0.15V
Gate/source voltage Vgs
14V
Number of terminals
3
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
125W
Pinout
1 - G, 2 - S, 3 - D
Quantity per case
1
RoHS
yes
Spec info
complementary transistor (pair) ECX10P20
Td(off)
50 ns
Td(on)
100 ns
Technology
N–CHANNEL POWER MOSFET
Type of transistor
MOSFET
Various
HI-FI Power Amplifier
Original product from manufacturer
Exicon