| Quantity in stock: 47 |
N-channel transistor 2SK1358, 9A, 300uA, 1.1 Ohms, TO-3P ( TO-218 SOT-93 ), TO-3P, 900V
Quantity
Unit price
1-4
8.47$
5-24
7.95$
25-49
7.50$
50-74
7.10$
75+
6.43$
| Equivalence available | |
| Quantity in stock: 14 |
N-channel transistor 2SK1358, 9A, 300uA, 1.1 Ohms, TO-3P ( TO-218 SOT-93 ), TO-3P, 900V. ID (T=25°C): 9A. Idss (max): 300uA. On-resistance Rds On: 1.1 Ohms. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Voltage Vds(max): 900V. Assembly/installation: PCB through-hole mounting. C(in): 1300pF. Channel type: N. Cost): 180pF. Function: High Speed, tr--25nS tf--20nS. Gate/source voltage Vgs: 30 v. IDss (min): -. Id(imp): 27A. Operating temperature: -...+150°C. Pd (Power Dissipation, Max): 150W. Quantity per case: 1. Td(off): 100 ns. Td(on): 40 ns. Technology: Field Effect Transistor MOS II.5. Type of transistor: MOSFET. Vgs(th) max.: 3.5V. Vgs(th) min.: 1.5V. Original product from manufacturer: Toshiba. Quantity in stock updated on 10/31/2025, 09:31
2SK1358
23 parameters
ID (T=25°C)
9A
Idss (max)
300uA
On-resistance Rds On
1.1 Ohms
Housing
TO-3P ( TO-218 SOT-93 )
Housing (according to data sheet)
TO-3P
Voltage Vds(max)
900V
Assembly/installation
PCB through-hole mounting
C(in)
1300pF
Channel type
N
Cost)
180pF
Function
High Speed, tr--25nS tf--20nS
Gate/source voltage Vgs
30 v
Id(imp)
27A
Operating temperature
-...+150°C
Pd (Power Dissipation, Max)
150W
Quantity per case
1
Td(off)
100 ns
Td(on)
40 ns
Technology
Field Effect Transistor MOS II.5
Type of transistor
MOSFET
Vgs(th) max.
3.5V
Vgs(th) min.
1.5V
Original product from manufacturer
Toshiba