N-channel transistor, 8A, 500uA, 1.5 Ohms, TO-3PF, 900V, TO-3PF (SOT399, 2-16E3A) - 2SK1217

Quantity	excl. VAT	VAT incl.
1 - 1	24.76$	24.76$
2 - 2	23.52$	23.52$
3 - 4	22.28$	22.28$
5 - 9	21.04$	21.04$
10 - 14	20.55$	20.55$
15 - 19	20.05$	20.05$
20+	19.31$	19.31$

Quantity	U.P
1 - 1	24.76$	24.76$
2 - 2	23.52$	23.52$
3 - 4	22.28$	22.28$
5 - 9	21.04$	21.04$
10 - 14	20.55$	20.55$
15 - 19	20.05$	20.05$
20+	19.31$	19.31$

Delivery in 2-3 days, with postal tracking!

Out of stock

Set of 1

N-channel transistor, 8A, 500uA, 1.5 Ohms, TO-3PF, 900V, TO-3PF (SOT399, 2-16E3A) - 2SK1217. N-channel transistor, 8A, 500uA, 1.5 Ohms, TO-3PF, 900V, TO-3PF (SOT399, 2-16E3A). ID (T=25°C): 8A. Idss (max): 500uA. On-resistance Rds On: 1.5 Ohms. Housing (according to data sheet): TO-3PF. Voltage Vds(max): 900V. Housing: TO-3PF (SOT399, 2-16E3A). C(in): 1400pF. Cost): 200pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 1000 ns. Type of transistor: MOSFET. Function: Low Driving Power High Speed Switching. Id(imp): 23A. IDss (min): 10uA. Number of terminals: 3. Pd (Power Dissipation, Max): 100W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 300 ns. Td(on): 50 ns. Technology: V-MOS. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 2.5V. G-S Protection: no. Quantity in stock updated on 13/04/2025, 11:25.

Technical documentation