Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 1 | 24.76$ | 24.76$ |
2 - 2 | 23.52$ | 23.52$ |
3 - 4 | 23.02$ | 23.02$ |
5 - 9 | 22.53$ | 22.53$ |
10 - 14 | 22.28$ | 22.28$ |
15 - 19 | 21.78$ | 21.78$ |
20+ | 21.04$ | 21.04$ |
Quantity | U.P | |
---|---|---|
1 - 1 | 24.76$ | 24.76$ |
2 - 2 | 23.52$ | 23.52$ |
3 - 4 | 23.02$ | 23.02$ |
5 - 9 | 22.53$ | 22.53$ |
10 - 14 | 22.28$ | 22.28$ |
15 - 19 | 21.78$ | 21.78$ |
20+ | 21.04$ | 21.04$ |
N-channel transistor, 8A, 500uA, 1.5 Ohms, TO-3PF (SOT399, 2-16E3A), TO-3PF, 900V - 2SK1217. N-channel transistor, 8A, 500uA, 1.5 Ohms, TO-3PF (SOT399, 2-16E3A), TO-3PF, 900V. ID (T=25°C): 8A. Idss (max): 500uA. On-resistance Rds On: 1.5 Ohms. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): TO-3PF. Voltage Vds(max): 900V. C(in): 1400pF. Cost): 200pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 1000 ns. Type of transistor: MOSFET. Function: Low Driving Power High Speed Switching. G-S Protection: no. Id(imp): 23A. IDss (min): 10uA. Number of terminals: 3. Pd (Power Dissipation, Max): 100W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 300 ns. Td(on): 50 ns. Technology: V-MOS. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 2.5V. Original product from manufacturer Fuji Electric. Quantity in stock updated on 31/05/2025, 23:25.
Information and technical help
Payment and delivery
Delivery in 2-3 days, with postal tracking!
All rights reserved, RPtronics, 2024.