N-channel transistor 2N7000-ONS, 0.2A, 1000uA, 5 Ohms, TO-92, TO-92, 60V

N-channel transistor 2N7000-ONS, 0.2A, 1000uA, 5 Ohms, TO-92, TO-92, 60V

Quantity
Unit price
1-4
0.32$
5-49
0.27$
50-99
0.25$
100-199
0.22$
200+
0.18$
Equivalence available
Quantity in stock: 332

N-channel transistor 2N7000-ONS, 0.2A, 1000uA, 5 Ohms, TO-92, TO-92, 60V. ID (T=25°C): 0.2A. Idss (max): 1000uA. On-resistance Rds On: 5 Ohms. Housing: TO-92. Housing (according to data sheet): TO-92. Voltage Vds(max): 60V. Assembly/installation: PCB through-hole mounting. C(in): 60pF. Channel type: N. Cost): 25pF. Drain-source protection: yes. G-S Protection: no. Gate/source voltage Vgs: 20V. IDss (min): 1uA. Id(imp): 0.5A. Marking on the case: 2n7000. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 0.35W. Quantity per case: 1. Td(off): 10 ns. Td(on): 10 ns. Type of transistor: MOSFET. Vgs(th) max.: 3V. Vgs(th) min.: 0.8V. Weight: 0.18g. Original product from manufacturer: Diotec Semiconductor. Quantity in stock updated on 10/31/2025, 09:31

2N7000-ONS
27 parameters
ID (T=25°C)
0.2A
Idss (max)
1000uA
On-resistance Rds On
5 Ohms
Housing
TO-92
Housing (according to data sheet)
TO-92
Voltage Vds(max)
60V
Assembly/installation
PCB through-hole mounting
C(in)
60pF
Channel type
N
Cost)
25pF
Drain-source protection
yes
G-S Protection
no
Gate/source voltage Vgs
20V
IDss (min)
1uA
Id(imp)
0.5A
Marking on the case
2n7000
Number of terminals
3
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
0.35W
Quantity per case
1
Td(off)
10 ns
Td(on)
10 ns
Type of transistor
MOSFET
Vgs(th) max.
3V
Vgs(th) min.
0.8V
Weight
0.18g
Original product from manufacturer
Diotec Semiconductor

Equivalent products and/or accessories for 2N7000-ONS