N-channel transistor BS170, TO-92, 60V, 0.5A, 10nA, 1.2 Ohms, TO-92, 60V. Housing: TO-92. Housing (JEDEC standard): -. Drain-source voltage Uds [V]: 60V. ID (T=25°C): 0.5A. Idss (max): 10nA. On-resistance Rds On: 1.2 Ohms. Housing (according to data sheet): TO-92. Voltage Vds(max): 60V. Assembly/installation: PCB through-hole mounting. C(in): 24pF. Channel type: N. Ciss Gate Capacitance [pF]: 60pF. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Cost): 40pF. Drain current Id (A) @ 25°C: 0.3A. Drain current through resistor Rds [Ohm] @ Ids [A]: 1.8 Ohms @ 0.2A. Drain current: 500mA. Drain-source protection: zener diode. Drain-source voltage: 60V. Function: N MOSFET transistor. G-S Protection: no. Gate breakdown voltage Ugs [V]: 3V. Gate/source voltage Vgs: 20V. IDss (min): 0.5uA. Id(imp): 1.2A. Manufacturer's marking: BS170. Marking on the case: BS170. Max drain current: 0.5A. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 0.83W. Number of terminals: 3. Number of terminals: 3. On-state resistance: 5 Ohms. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 0.83W. Polarity: unipolar. Power: 0.83W. Quantity per case: 1. RoHS: yes. Switch-off delay tf[nsec.]: 4 ns. Switch-on time ton [nsec.]: 4 ns. Td(off): 10 ns. Td(on): 10 ns. Technology: Field effect transistor. Small signals. Type of transistor: MOSFET. Vgs(th) min.: 2.1V. Original product from manufacturer: Fairchild. Quantity in stock updated on 10/31/2025, 09:25