Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 0.74$ | 0.74$ |
5 - 9 | 0.70$ | 0.70$ |
10 - 24 | 0.67$ | 0.67$ |
25 - 49 | 0.63$ | 0.63$ |
50 - 99 | 0.61$ | 0.61$ |
100 - 249 | 0.52$ | 0.52$ |
250 - 498 | 0.50$ | 0.50$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 0.74$ | 0.74$ |
5 - 9 | 0.70$ | 0.70$ |
10 - 24 | 0.67$ | 0.67$ |
25 - 49 | 0.63$ | 0.63$ |
50 - 99 | 0.61$ | 0.61$ |
100 - 249 | 0.52$ | 0.52$ |
250 - 498 | 0.50$ | 0.50$ |
MJE210G. Cost): 120pF. Quantity per case: 1. Semiconductor material: silicon. FT: 65MHz. Collector current: 5A. Pd (Power Dissipation, Max): 15W. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-225. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 25V. Saturation voltage VCE(sat): 0.3V. Maximum saturation voltage VCE(sat): 1.8V. Collector/emitter voltage Vceo: 40V. Vebo: 8V. Spec info: complementary transistor (pair) MJE200. Housing: TO-126 (TO-225, SOT-32). BE diode: no. CE diode: no. Quantity in stock updated on 15/01/2025, 19:25.
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