Electronic components and equipment, for businesses and individuals

MJE210G

MJE210G
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Quantity excl. VAT VAT incl.
1 - 4 0.74$ 0.74$
5 - 9 0.70$ 0.70$
10 - 24 0.67$ 0.67$
25 - 49 0.63$ 0.63$
50 - 99 0.61$ 0.61$
100 - 249 0.52$ 0.52$
250 - 498 0.50$ 0.50$
Quantity U.P
1 - 4 0.74$ 0.74$
5 - 9 0.70$ 0.70$
10 - 24 0.67$ 0.67$
25 - 49 0.63$ 0.63$
50 - 99 0.61$ 0.61$
100 - 249 0.52$ 0.52$
250 - 498 0.50$ 0.50$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 498
Set of 1

MJE210G. Cost): 120pF. Quantity per case: 1. Semiconductor material: silicon. FT: 65MHz. Collector current: 5A. Pd (Power Dissipation, Max): 15W. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-225. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 25V. Saturation voltage VCE(sat): 0.3V. Maximum saturation voltage VCE(sat): 1.8V. Collector/emitter voltage Vceo: 40V. Vebo: 8V. Spec info: complementary transistor (pair) MJE200. Housing: TO-126 (TO-225, SOT-32). BE diode: no. CE diode: no. Quantity in stock updated on 15/01/2025, 19:25.

Equivalent products :

Quantity in stock : 438
MJE253G

MJE253G

Type of transistor: Power Transistor. Polarity: PNP. Collector-Emitter Voltage VCEO: -100V. Collecto...
MJE253G
Type of transistor: Power Transistor. Polarity: PNP. Collector-Emitter Voltage VCEO: -100V. Collector current: -4A. Power: 15W. Max frequency: 40 MHz. Housing: TO-126. Semiconductor material: silicon. FT: 40 MHz. Function: High speed switching. Audio. Max hFE gain: 180. Minimum hFE gain: 40. Collector current: 4A. Ic(pulse): 8A. Number of terminals: 3. Pd (Power Dissipation, Max): 15W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-225. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 100V. Saturation voltage VCE(sat): 0.3V. Collector/emitter voltage Vceo: 100V. Vebo: 7V. Spec info: complementary transistor (pair) MJE243. Housing: TO-126 (TO-225, SOT-32)
MJE253G
Type of transistor: Power Transistor. Polarity: PNP. Collector-Emitter Voltage VCEO: -100V. Collector current: -4A. Power: 15W. Max frequency: 40 MHz. Housing: TO-126. Semiconductor material: silicon. FT: 40 MHz. Function: High speed switching. Audio. Max hFE gain: 180. Minimum hFE gain: 40. Collector current: 4A. Ic(pulse): 8A. Number of terminals: 3. Pd (Power Dissipation, Max): 15W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-225. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 100V. Saturation voltage VCE(sat): 0.3V. Collector/emitter voltage Vceo: 100V. Vebo: 7V. Spec info: complementary transistor (pair) MJE243. Housing: TO-126 (TO-225, SOT-32)
Set of 1
0.84$ VAT incl.
(0.84$ excl. VAT)
0.84$

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Quantity in stock : 399
MJE243G

MJE243G

Collector current: 4A. Resistor B: NPN power transistor. BE resistor: 100V. C(in): 4A. Cost): 15W. Q...
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ZTX753

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Cost): 30pF. Semiconductor material: silicon. FT: 140 MHz. Function: Very low saturation VBE(sat) 0....
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TIP42C

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Semiconductor material: silicon. FT: 3 MHz. Function: Complementary power transistors. Max hFE gain:...
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BC550C

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Quantity per case: 1. Semiconductor material: silicon. FT: 250 MHz. Function: hFE 420...800 (IC=2mAd...
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KUY12

KUY12

Cost): 0.6pF. Quantity per case: 1. Semiconductor material: silicon. FT: 11 MHz. Function: S-L. Coll...
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BC546B

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RoHS: yes. Housing: TO-92. Resistor B: yes. BE resistor: PCB soldering. C(in): TO-92. Cost): 6pF. Qu...
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Quantity in stock : 528
MPSA56

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Semiconductor material: silicon. FT: 50 MHz. Function: NF-TR. Minimum hFE gain: 100. Collector curre...
MPSA56
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Quantity in stock : 238
TIP41C

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Cost): 80pF. Semiconductor material: silicon. FT: 3 MHz. Function: Complementary power transistors. ...
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Quantity in stock : 1066
MPSA06

MPSA06

BE resistor: 10. Cost): 300pF. Darlington transistor?: no. Semiconductor material: silicon. FT: 100M...
MPSA06
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