Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 9 | 0.47$ | 0.47$ |
10 - 24 | 0.44$ | 0.44$ |
25 - 49 | 0.42$ | 0.42$ |
50 - 99 | 0.40$ | 0.40$ |
100 - 249 | 0.34$ | 0.34$ |
250 - 499 | 0.33$ | 0.33$ |
500 - 1758 | 0.32$ | 0.32$ |
Quantity | U.P | |
---|---|---|
1 - 9 | 0.47$ | 0.47$ |
10 - 24 | 0.44$ | 0.44$ |
25 - 49 | 0.42$ | 0.42$ |
50 - 99 | 0.40$ | 0.40$ |
100 - 249 | 0.34$ | 0.34$ |
250 - 499 | 0.33$ | 0.33$ |
500 - 1758 | 0.32$ | 0.32$ |
1N5956B. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Function: ESD Rating of Class 3 (>16kV) per Human Body Model. MRI (max): 1uA. Pd (Power Dissipation, Max): 3W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-41. Housing (according to data sheet): DO-41 ( DO-204AL ) ( 4.8x2.5mm ). Tolerance: 5%. Operating temperature: -65...+200°C. VRRM: 200V. Zener voltage: 200V. Number of terminals: 2. Quantity per case: 1. Conditioning unit: 2000. Quantity in stock updated on 24/12/2024, 16:25.
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