NPN transistor, 0.15A, TO-92, TO-92, 50V - KTC9014
| Quantity | excl. VAT | VAT incl. |
|---|---|---|
| 1 - 9 | 0.70$ | 0.70$ |
| 10 - 24 | 0.66$ | 0.66$ |
| 25 - 49 | 0.64$ | 0.64$ |
| 50 - 99 | 0.63$ | 0.63$ |
| 100 - 249 | 0.62$ | 0.62$ |
| 250 - 499 | 0.59$ | 0.59$ |
| 500+ | 0.57$ | 0.57$ |
| Quantity | U.P | |
|---|---|---|
| 1 - 9 | 0.70$ | 0.70$ |
| 10 - 24 | 0.66$ | 0.66$ |
| 25 - 49 | 0.64$ | 0.64$ |
| 50 - 99 | 0.63$ | 0.63$ |
| 100 - 249 | 0.62$ | 0.62$ |
| 250 - 499 | 0.59$ | 0.59$ |
| 500+ | 0.57$ | 0.57$ |
Delivery in 2-3 days, with postal tracking!
NPN transistor, 0.15A, TO-92, TO-92, 50V - KTC9014. NPN transistor, 0.15A, TO-92, TO-92, 50V. Collector current: 0.15A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 50V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 60 MHz. Function: general purpose. Pd (Power Dissipation, Max): 0.625W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Original product from manufacturer Korea Electronics Semi.. Quantity in stock updated on 17/06/2025, 11:25.
Equivalent products :
2SC1740
NPN transistor, 0.15A, TO-92, TO-92S ( SPT SC-72 ), 50V. Collector current: 0.15A. Housing: TO-92. H...
NPN transistor, 0.15A, TO-92, TO-92S ( SPT SC-72 ), 50V. Collector current: 0.15A. Housing: TO-92. Housing (according to data sheet): TO-92S ( SPT SC-72 ). Collector/emitter voltage Vceo: 50V. BE diode: no. Cost): 3.5pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 180 MHz. Max hFE gain: 560. Minimum hFE gain: 120. Marking on the case: C1710. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.3W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 60V. Saturation voltage VCE(sat): 0.4V. Vebo: 7V
NPN transistor, 0.15A, TO-92, TO-92S ( SPT SC-72 ), 50V. Collector current: 0.15A. Housing: TO-92. Housing (according to data sheet): TO-92S ( SPT SC-72 ). Collector/emitter voltage Vceo: 50V. BE diode: no. Cost): 3.5pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 180 MHz. Max hFE gain: 560. Minimum hFE gain: 120. Marking on the case: C1710. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.3W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 60V. Saturation voltage VCE(sat): 0.4V. Vebo: 7V
SS9014
NPN transistor, 0.1A, 50V. Collector current: 0.1A. Collector/emitter voltage Vceo: 50V. BE diode: n...
NPN transistor, 0.1A, 50V. Collector current: 0.1A. Collector/emitter voltage Vceo: 50V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 270 MHz. Function: general purpose. Pd (Power Dissipation, Max): 0.45W. Type of transistor: NPN
NPN transistor, 0.1A, 50V. Collector current: 0.1A. Collector/emitter voltage Vceo: 50V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 270 MHz. Function: general purpose. Pd (Power Dissipation, Max): 0.45W. Type of transistor: NPN
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