Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 1.25$ | 1.25$ |
5 - 9 | 1.18$ | 1.18$ |
10 - 24 | 1.15$ | 1.15$ |
25 - 49 | 1.12$ | 1.12$ |
50 - 99 | 1.10$ | 1.10$ |
100 - 249 | 1.06$ | 1.06$ |
250+ | 1.02$ | 1.02$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 1.25$ | 1.25$ |
5 - 9 | 1.18$ | 1.18$ |
10 - 24 | 1.15$ | 1.15$ |
25 - 49 | 1.12$ | 1.12$ |
50 - 99 | 1.10$ | 1.10$ |
100 - 249 | 1.06$ | 1.06$ |
250+ | 1.02$ | 1.02$ |
KBU607. VRRM: 1000V. Forward current (AV): 6A. Cj: 94pF. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. IFSM: 175A. MRI (max): 500uA. MRI (min): 5uA. Dimensions of connections: 5.08x5.08mm. Number of terminals: 4. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): 22.3x19x3.6mm. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1V. Original product from manufacturer Taiwan Semiconductor. Quantity in stock updated on 12/06/2025, 15:25.
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