Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 9 | 0.62$ | 0.62$ |
10 - 24 | 0.59$ | 0.59$ |
25 - 49 | 0.56$ | 0.56$ |
50 - 99 | 0.53$ | 0.53$ |
100 - 150 | 0.48$ | 0.48$ |
Quantity | U.P | |
---|---|---|
1 - 9 | 0.62$ | 0.62$ |
10 - 24 | 0.59$ | 0.59$ |
25 - 49 | 0.56$ | 0.56$ |
50 - 99 | 0.53$ | 0.53$ |
100 - 150 | 0.48$ | 0.48$ |
B1000C6000A. Cj: 50pF. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. Forward current (AV): 6A. IFSM: 158A. MRI (min): 5uA. Equivalents: KBU607G, KBU610, GBU6M-E3/45, GBU607C2. Dimensions of connections: 5.08x5.08mm. Number of terminals: 4. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): 21.5x18.3x3.4mm. Operating temperature: -50...+150°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V. VRRM: 1000V. Spec info: Ifsm 158A (50Hz 10ms), 175A (60Hz 8.3ms). Quantity in stock updated on 24/12/2024, 02:25.
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