Electronic components and equipment, for businesses and individuals

Product categories :

IXFH32N50

Quantity	excl. VAT	VAT incl.
1 - 1	22.96$	22.96$
2 - 2	21.81$	21.81$
3 - 4	20.67$	20.67$
5 - 9	19.52$	19.52$
10 - 14	19.06$	19.06$
15 - 19	18.60$	18.60$
20+	17.91$	17.91$

Quantity	U.P
1 - 1	22.96$	22.96$
2 - 2	21.81$	21.81$
3 - 4	20.67$	20.67$
5 - 9	19.52$	19.52$
10 - 14	19.06$	19.06$
15 - 19	18.60$	18.60$
20+	17.91$	17.91$

Delivery in 2-3 days, with postal tracking!

Out of stock

Set of 1

IXFH32N50. C(in): 5700pF. Cost): 750pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Quantity per case: 1. Trr Diode (Min.): 250 ns. Type of transistor: MOSFET. Id(imp): 128A. ID (T=25°C): 32A. Idss (max): 1mA. IDss (min): 200uA. Number of terminals: 3. Pd (Power Dissipation, Max): 360W. On-resistance Rds On: 0.15 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 110 ns. Td(on): 35 ns. Technology: HiPerFet Power MOSFET. Housing: TO-247. Housing (according to data sheet): TO-247AD. Operating temperature: -55...+150°C. Voltage Vds(max): 500V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Spec info: dv/dt 5V/ns. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 15/01/2025, 06:25.

Technical documentation

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