Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 1.12$ | 1.12$ |
5 - 9 | 1.06$ | 1.06$ |
10 - 24 | 1.01$ | 1.01$ |
25 - 26 | 0.95$ | 0.95$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 1.12$ | 1.12$ |
5 - 9 | 1.06$ | 1.06$ |
10 - 24 | 1.01$ | 1.01$ |
25 - 26 | 0.95$ | 0.95$ |
IRFD014. C(in): 310pF. Cost): 160pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 70 ns. Type of transistor: FET. Function: td(on) 10ns, td(off) 13ns. Id(imp): 14A. ID (T=100°C): 1.2A. ID (T=25°C): 1.7A. Idss: 0.025mA. Idss (max): 250uA. IDss (min): 25uA. Number of terminals: 4. Pd (Power Dissipation, Max): 1.3W. On-resistance Rds On: 0.20 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 13 ns. Td(on): 10 ns. Technology: HEXFET Power MOSFET. Housing: DIP. Housing (according to data sheet): DH-1 house, DIP-4. Voltage Vds(max): 60V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 13/01/2025, 01:25.
Information and technical help
Payment and delivery
Delivery in 2-3 days, with postal tracking!
All rights reserved, RPtronics, 2024.