IRFD110

Quantity	excl. VAT	VAT incl.
1 - 4	0.85$	0.85$
5 - 9	0.81$	0.81$
10 - 24	0.77$	0.77$
25 - 49	0.72$	0.72$
50 - 69	0.71$	0.71$

Quantity	U.P
1 - 4	0.85$	0.85$
5 - 9	0.81$	0.81$
10 - 24	0.77$	0.77$
25 - 49	0.72$	0.72$
50 - 69	0.71$	0.71$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 69

Set of 1

IRFD110. C(in): 180pF. Cost): 81pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 100 ns. Type of transistor: MOSFET. Id(imp): 8A. ID (T=100°C): 0.71A. ID (T=25°C): 1A. Idss (max): 250uA. IDss (min): 25uA. Number of terminals: 4. Pd (Power Dissipation, Max): 1.3W. On-resistance Rds On: 0.54 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 15 ns. Td(on): 6.9ns. Technology: HEXFET Power MOSFET. Housing: DIP. Housing (according to data sheet): DH-1 house, DIP-4. Operating temperature: -55...+175°C. Voltage Vds(max): 100V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 25/12/2024, 17:25.

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Delivery in 2-3 days, with postal tracking!