Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 9 | 0.26$ | 0.26$ |
10 - 24 | 0.25$ | 0.25$ |
25 - 49 | 0.24$ | 0.24$ |
50 - 99 | 0.23$ | 0.23$ |
100 - 249 | 0.19$ | 0.19$ |
250 - 499 | 0.18$ | 0.18$ |
500 - 580 | 0.17$ | 0.17$ |
Quantity | U.P | |
---|---|---|
1 - 9 | 0.26$ | 0.26$ |
10 - 24 | 0.25$ | 0.25$ |
25 - 49 | 0.24$ | 0.24$ |
50 - 99 | 0.23$ | 0.23$ |
100 - 249 | 0.19$ | 0.19$ |
250 - 499 | 0.18$ | 0.18$ |
500 - 580 | 0.17$ | 0.17$ |
HER303. Cj: 70pF. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: High Speed Switching. Forward current (AV): 3A. IFSM: 150A peak. MRI (max): 150uA. MRI (min): 10uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-27. Housing (according to data sheet): DO-27 (5.6 x 9.5mm). Operating temperature: -60...+150°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V. VRRM: 200V. Number of terminals: 2. Note: high efficiency rectifier diode. Spec info: Ifsm 150Ap T=8.3ms. Quantity in stock updated on 26/12/2024, 16:25.
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