Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 9 | 0.31$ | 0.31$ |
10 - 24 | 0.29$ | 0.29$ |
25 - 49 | 0.28$ | 0.28$ |
50 - 99 | 0.26$ | 0.26$ |
100 - 249 | 0.23$ | 0.23$ |
250 - 412 | 0.22$ | 0.22$ |
Quantity | U.P | |
---|---|---|
1 - 9 | 0.31$ | 0.31$ |
10 - 24 | 0.29$ | 0.29$ |
25 - 49 | 0.28$ | 0.28$ |
50 - 99 | 0.26$ | 0.26$ |
100 - 249 | 0.23$ | 0.23$ |
250 - 412 | 0.22$ | 0.22$ |
HER308. Cj: 80pF. Trr Diode (Min.): 75 ns. Semiconductor material: silicon. Function: High Speed Switching. Forward current (AV): 3A. IFSM: 125A. MRI (max): 200uA. MRI (min): 10uA. RoHS: yes. Weight: 1.1g. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): DO-201AD ( 9.0x5.3mm ). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V. VRRM: 1000V. Number of terminals: 2. Note: high efficiency rectifier diode. Quantity per case: 1. Spec info: Ifsm 125Ap T=8.3ms. Quantity in stock updated on 24/12/2024, 12:25.
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