N-channel transistor, 2.8A, 8A, 10uA, 1.12 Ohms, TO-220FP, TO-220F, 900V - FQPF9N90C

N-channel transistor, 2.8A, 8A, 10uA, 1.12 Ohms, TO-220FP, TO-220F, 900V - FQPF9N90C. N-channel transistor, 2.8A, 8A, 10uA, 1.12 Ohms, TO-220FP, TO-220F, 900V. ID (T=100°C): 2.8A. ID (T=25°C): 8A. Idss (max): 10uA. On-resistance Rds On: 1.12 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 900V. C(in): 2100pF. Cost): 175pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 550 ns. Type of transistor: MOSFET. Id(imp): 32A. IDss (min): 10uA. Pd (Power Dissipation, Max): 68W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 100 ns. Td(on): 50 ns. Technology: DMOS, QFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. Function: Fast switch, Low gate charge 40nC, Low Crss 14pF. Spec info: Zero Gate Voltage Drain Current. G-S Protection: no. Quantity in stock updated on 16/04/2025, 09:25.