FQPF19N20C

Quantity	excl. VAT	VAT incl.
1 - 4	2.69$	2.69$
5 - 9	2.56$	2.56$
10 - 24	2.42$	2.42$
25 - 49	2.29$	2.29$
50 - 97	2.23$	2.23$

Quantity	U.P
1 - 4	2.69$	2.69$
5 - 9	2.56$	2.56$
10 - 24	2.42$	2.42$
25 - 49	2.29$	2.29$
50 - 97	2.23$	2.23$

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Quantity in stock : 97

Set of 1

FQPF19N20C. C(in): 830pF. Cost): 195pF. Channel type: N. Trr Diode (Min.): 208 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 76A. ID (T=100°C): 12.1A. ID (T=25°C): 19A. Idss (max): 100uA. IDss (min): 10uA. Pd (Power Dissipation, Max): 43W. On-resistance Rds On: 0.14 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 135 ns. Td(on): 15 ns. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Operating temperature: -55...+150°C. Voltage Vds(max): 200V. Gate/source voltage Vgs: 30 v. Gate/source voltage (off) min.: 2V. Vgs(th) max.: 4 v. Number of terminals: 3. Quantity per case: 1. Technology: N-channel MOSFET transistor (DMOS, QFET). Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 11/01/2025, 23:25.

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Delivery in 2-3 days, with postal tracking!