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Semiconductors Transistors

FQPF19N20

FQPF19N20
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 2.61$ 2.61$
5 - 9 2.48$ 2.48$
10 - 21 2.35$ 2.35$
Quantity U.P
1 - 4 2.61$ 2.61$
5 - 9 2.48$ 2.48$
10 - 21 2.35$ 2.35$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 21
Set of 1

FQPF19N20. C(in): 1220pF. Cost): 220pF. Channel type: N. Trr Diode (Min.): 140 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 48A. ID (T=100°C): 7.5A. ID (T=25°C): 11.8A. Idss (max): 10uA. IDss (min): 1uA. Pd (Power Dissipation, Max): 50W. On-resistance Rds On: 0.12 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 55 ns. Td(on): 20 ns. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Operating temperature: -55...+150°C. Voltage Vds(max): 200V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. Technology: N-channel MOSFET transistor (DMOS, QFET). Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 11/01/2025, 23:25.

Technical documentation

Equivalent products :

Quantity in stock : 97
FQPF19N20C

FQPF19N20C

C(in): 830pF. Cost): 195pF. Channel type: N. Trr Diode (Min.): 208 ns. Type of transistor: MOSFET. F...
FQPF19N20C
C(in): 830pF. Cost): 195pF. Channel type: N. Trr Diode (Min.): 208 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 76A. ID (T=100°C): 12.1A. ID (T=25°C): 19A. Idss (max): 100uA. IDss (min): 10uA. Pd (Power Dissipation, Max): 43W. On-resistance Rds On: 0.14 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 135 ns. Td(on): 15 ns. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Operating temperature: -55...+150°C. Voltage Vds(max): 200V. Gate/source voltage Vgs: 30 v. Gate/source voltage (off) min.: 2V. Vgs(th) max.: 4 v. Number of terminals: 3. Quantity per case: 1. Technology: N-channel MOSFET transistor (DMOS, QFET). Drain-source protection : yes. G-S Protection: no
FQPF19N20C
C(in): 830pF. Cost): 195pF. Channel type: N. Trr Diode (Min.): 208 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 76A. ID (T=100°C): 12.1A. ID (T=25°C): 19A. Idss (max): 100uA. IDss (min): 10uA. Pd (Power Dissipation, Max): 43W. On-resistance Rds On: 0.14 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 135 ns. Td(on): 15 ns. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Operating temperature: -55...+150°C. Voltage Vds(max): 200V. Gate/source voltage Vgs: 30 v. Gate/source voltage (off) min.: 2V. Vgs(th) max.: 4 v. Number of terminals: 3. Quantity per case: 1. Technology: N-channel MOSFET transistor (DMOS, QFET). Drain-source protection : yes. G-S Protection: no
Set of 1
2.69$ VAT incl.
(2.69$ excl. VAT)
2.69$

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