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Semiconductors Diodes Standard and Rectifier Diodes

DSEI2X101-06A

DSEI2X101-06A
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 1 35.68$ 35.68$
2 - 2 33.89$ 33.89$
3 - 4 32.11$ 32.11$
5 - 9 30.33$ 30.33$
10 - 14 29.61$ 29.61$
15 - 18 28.90$ 28.90$
Quantity U.P
1 - 1 35.68$ 35.68$
2 - 2 33.89$ 33.89$
3 - 4 32.11$ 32.11$
5 - 9 30.33$ 30.33$
10 - 14 29.61$ 29.61$
15 - 18 28.90$ 28.90$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 18
Set of 1

DSEI2X101-06A. Conditioning: plastic tube. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 35 ns. Semiconductor material: silicon. Forward current (AV): 2x96A. IFSM: 1200A. MRI (max): 20mA. MRI (min): 1mA. Pd (Power Dissipation, Max): 250W. RoHS: yes. Assembly/installation: screw. Technology: 'Epitaxial Diode'. Housing: ISOTOP ( SOT227B ). Housing (according to data sheet): ISOTOP ( SOT227B ). Operating temperature: -40...+150°C. Threshold voltage Vf (max): 1.25V. Forward voltage Vf (min): 1.17V. VRRM: 600V. Conditioning unit: 10. Quantity per case: 2. Number of terminals: 4. Function: dual fast recovery diode. Spec info: 1200Ap t=10ms, TVJ=45°C, 1080Ap t=10ms, TVJ=150°C. Quantity in stock updated on 25/12/2024, 05:25.

Technical documentation

Equivalent products :

Out of stock
DSEI2X101-12A

DSEI2X101-12A

Conditioning: plastic tube. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 40 ns. Semiconduc...
DSEI2X101-12A
Conditioning: plastic tube. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 40 ns. Semiconductor material: silicon. Forward current (AV): 2x91A. IFSM: 900A. MRI (max): 15mA. MRI (min): 1.5mA. Pd (Power Dissipation, Max): 250W. Delivery time: KB. Assembly/installation: screw. Technology: 'Epitaxial Diode'. Housing: ISOTOP ( SOT227B ). Housing (according to data sheet): ISOTOP ( SOT227B ). Operating temperature: -40...+150°C. Threshold voltage Vf (max): 1.87V. Forward voltage Vf (min): 1.61V. VRRM: 1200V. Conditioning unit: 10. Quantity per case: 2. Note: epitaxial diode, high current. Note: 900App/10ms, 45°C. Function: dual fast recovery diode. Spec info: 810Ap t=10ms, TVJ=150°C
DSEI2X101-12A
Conditioning: plastic tube. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 40 ns. Semiconductor material: silicon. Forward current (AV): 2x91A. IFSM: 900A. MRI (max): 15mA. MRI (min): 1.5mA. Pd (Power Dissipation, Max): 250W. Delivery time: KB. Assembly/installation: screw. Technology: 'Epitaxial Diode'. Housing: ISOTOP ( SOT227B ). Housing (according to data sheet): ISOTOP ( SOT227B ). Operating temperature: -40...+150°C. Threshold voltage Vf (max): 1.87V. Forward voltage Vf (min): 1.61V. VRRM: 1200V. Conditioning unit: 10. Quantity per case: 2. Note: epitaxial diode, high current. Note: 900App/10ms, 45°C. Function: dual fast recovery diode. Spec info: 810Ap t=10ms, TVJ=150°C
Set of 1
62.40$ VAT incl.
(62.40$ excl. VAT)
62.40$

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Quantity in stock : 18
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