DSEI2X101-12A

Quantity	excl. VAT	VAT incl.
1 - 1	62.40$	62.40$
2 - 2	59.28$	59.28$
3 - 4	58.03$	58.03$
5 - 9	56.78$	56.78$
10 - 14	56.16$	56.16$
15 - 19	55.54$	55.54$
20+	54.91$	54.91$

Quantity	U.P
1 - 1	62.40$	62.40$
2 - 2	59.28$	59.28$
3 - 4	58.03$	58.03$
5 - 9	56.78$	56.78$
10 - 14	56.16$	56.16$
15 - 19	55.54$	55.54$
20+	54.91$	54.91$

Delivery in 2-3 days, with postal tracking!

Out of stock

Set of 1

DSEI2X101-12A. Forward current (AV): 2x91A. IFSM: 900A. Housing: ISOTOP ( SOT227B ). Housing (according to data sheet): ISOTOP ( SOT227B ). VRRM: 1200V. Conditioning: plastic tube. Conditioning unit: 10. Quantity per case: 2. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 40 ns. Semiconductor material: silicon. Function: dual fast recovery diode. Note: epitaxial diode, high current. Note: 900App/10ms, 45°C. MRI (max): 15mA. MRI (min): 1.5mA. Pd (Power Dissipation, Max): 250W. Spec info: 810Ap t=10ms, TVJ=150°C. Delivery time: KB. Assembly/installation: screw. Technology: 'Epitaxial Diode'. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 1.87V. Forward voltage Vf (min): 1.61V. Original product from manufacturer IXYS. Quantity in stock updated on 21/05/2025, 07:25.

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Delivery in 2-3 days, with postal tracking!