DSEI2X101-12A

Quantity	excl. VAT	VAT incl.
1 - 1	62.40$	62.40$
2 - 2	59.28$	59.28$
3 - 4	56.16$	56.16$
5 - 9	53.04$	53.04$
10 - 14	51.79$	51.79$
15 - 19	50.54$	50.54$
20+	48.67$	48.67$

Quantity	U.P
1 - 1	62.40$	62.40$
2 - 2	59.28$	59.28$
3 - 4	56.16$	56.16$
5 - 9	53.04$	53.04$
10 - 14	51.79$	51.79$
15 - 19	50.54$	50.54$
20+	48.67$	48.67$

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Out of stock

Set of 1

DSEI2X101-12A. Conditioning: plastic tube. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 40 ns. Semiconductor material: silicon. Forward current (AV): 2x91A. IFSM: 900A. MRI (max): 15mA. MRI (min): 1.5mA. Pd (Power Dissipation, Max): 250W. Delivery time: KB. Assembly/installation: screw. Technology: 'Epitaxial Diode'. Housing: ISOTOP ( SOT227B ). Housing (according to data sheet): ISOTOP ( SOT227B ). Operating temperature: -40...+150°C. Threshold voltage Vf (max): 1.87V. Forward voltage Vf (min): 1.61V. VRRM: 1200V. Conditioning unit: 10. Quantity per case: 2. Note: epitaxial diode, high current. Note: 900App/10ms, 45°C. Function: dual fast recovery diode. Spec info: 810Ap t=10ms, TVJ=150°C. Quantity in stock updated on 25/12/2024, 17:25.

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Delivery in 2-3 days, with postal tracking!