Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 0.93$ | 0.93$ |
5 - 9 | 0.89$ | 0.89$ |
10 - 24 | 0.84$ | 0.84$ |
25 - 49 | 0.79$ | 0.79$ |
50 - 61 | 0.77$ | 0.77$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 0.93$ | 0.93$ |
5 - 9 | 0.89$ | 0.89$ |
10 - 24 | 0.84$ | 0.84$ |
25 - 49 | 0.79$ | 0.79$ |
50 - 61 | 0.77$ | 0.77$ |
BYV27-600. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 40 ns. Semiconductor material: silicon. Function: Ultra Fast Avalanche Sinterglass Diode. Forward current (AV): 2A. IFSM: 50A. MRI (max): 150uA. MRI (min): 5uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: SOD-57 ( Glass ). Housing (according to data sheet): SOD-57 Glass ( 4.5x3.6mm ). Operating temperature: -55...+175°C. Threshold voltage Vf (max): 1.07V. Forward voltage Vf (min): 0.88V. VRRM: 600V. Number of terminals: 2. Quantity per case: 1. Spec info: IFSM--50App, t=10mS. Quantity in stock updated on 25/12/2024, 06:25.
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