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Semiconductors Diodes Standard and Rectifier Diodes

BYV27-200-TAP

BYV27-200-TAP
[TITLE]
[TITLE]
[TITLE]
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Quantity excl. VAT VAT incl.
1 - 4 0.90$ 0.90$
5 - 9 0.86$ 0.86$
10 - 24 0.81$ 0.81$
25 - 49 0.77$ 0.77$
50 - 99 0.75$ 0.75$
100 - 249 0.66$ 0.66$
250 - 4699 0.63$ 0.63$
Quantity U.P
1 - 4 0.90$ 0.90$
5 - 9 0.86$ 0.86$
10 - 24 0.81$ 0.81$
25 - 49 0.77$ 0.77$
50 - 99 0.75$ 0.75$
100 - 249 0.66$ 0.66$
250 - 4699 0.63$ 0.63$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 4699
Set of 1

BYV27-200-TAP. RoHS: yes. Component family: Fast rectifier diode (tr<500ns). Housing: PCB soldering. Housing: SOD-57. Housing (JEDEC standard): Ultra Fast Avalanche Sinterglass Diode. Configuration: PCB through-hole mounting. Number of terminals: 2. Forward current [A]: 2A. Ifsm [A]: 50A. Close voltage (repetitive) Vrrm [V]: 200V. Leakage current on closing Ir [A]: 1uA..150uA. Switching speed (regeneration time) tr [sec.]: 25 ns. Operating temperature: -55...+175°C. Threshold voltage Vf (max): 1.07V. Forward voltage Vf (min): 0.88V. VRRM: 200V. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C. Forward voltage Vfmax (V): 1.07V @ 3A. Quantity in stock updated on 25/12/2024, 16:25.

Technical documentation

Equivalent products :

Quantity in stock : 61
BYV27-600

BYV27-600

Dielectric structure: Anode-Cathode. Trr Diode (Min.): 40 ns. Semiconductor material: silicon. Funct...
BYV27-600
Dielectric structure: Anode-Cathode. Trr Diode (Min.): 40 ns. Semiconductor material: silicon. Function: Ultra Fast Avalanche Sinterglass Diode. Forward current (AV): 2A. IFSM: 50A. MRI (max): 150uA. MRI (min): 5uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: SOD-57 ( Glass ). Housing (according to data sheet): SOD-57 Glass ( 4.5x3.6mm ). Operating temperature: -55...+175°C. Threshold voltage Vf (max): 1.07V. Forward voltage Vf (min): 0.88V. VRRM: 600V. Number of terminals: 2. Quantity per case: 1. Spec info: IFSM--50App, t=10mS
BYV27-600
Dielectric structure: Anode-Cathode. Trr Diode (Min.): 40 ns. Semiconductor material: silicon. Function: Ultra Fast Avalanche Sinterglass Diode. Forward current (AV): 2A. IFSM: 50A. MRI (max): 150uA. MRI (min): 5uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: SOD-57 ( Glass ). Housing (according to data sheet): SOD-57 Glass ( 4.5x3.6mm ). Operating temperature: -55...+175°C. Threshold voltage Vf (max): 1.07V. Forward voltage Vf (min): 0.88V. VRRM: 600V. Number of terminals: 2. Quantity per case: 1. Spec info: IFSM--50App, t=10mS
Set of 1
0.93$ VAT incl.
(0.93$ excl. VAT)
0.93$

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