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Electronic components and equipment, for businesses and individuals

BYT56M

BYT56M
[TITLE]
[TITLE]
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 1.31$ 1.31$
5 - 9 1.24$ 1.24$
10 - 24 1.18$ 1.18$
25 - 49 1.11$ 1.11$
50 - 99 1.09$ 1.09$
100 - 199 1.06$ 1.06$
Quantity U.P
1 - 4 1.31$ 1.31$
5 - 9 1.24$ 1.24$
10 - 24 1.18$ 1.18$
25 - 49 1.11$ 1.11$
50 - 99 1.09$ 1.09$
100 - 199 1.06$ 1.06$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 199
Set of 1

BYT56M. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 100 ns. Semiconductor material: silicon. Function: Very fast rectification and switching diode. Forward current (AV): 3A. IFSM: 80A. MRI (max): 150uA. MRI (min): 5uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: SOD-64 ( Glass ). Housing (according to data sheet): SOD-64 Glass. Operating temperature: -55...+175°C. Threshold voltage Vf (max): 1.4V. Forward voltage Vf (min): 1.4V. VRRM: 1000V. Number of terminals: 2. Quantity per case: 1. Conditioning unit: 2500. Spec info: IFSM--80Ap (t=10ms). Quantity in stock updated on 25/12/2024, 03:25.

Equivalent products :

Quantity in stock : 57
RGP30M

RGP30M

Semiconductor material: silicon. Forward current (AV): 3A. Note: 125App/8.3ms. Number of terminals: ...
RGP30M
Semiconductor material: silicon. Forward current (AV): 3A. Note: 125App/8.3ms. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): DO-201AD. VRRM: 1000V. Note: GI, S
RGP30M
Semiconductor material: silicon. Forward current (AV): 3A. Note: 125App/8.3ms. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): DO-201AD. VRRM: 1000V. Note: GI, S
Set of 1
0.75$ VAT incl.
(0.75$ excl. VAT)
0.75$

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