Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 1.31$ | 1.31$ |
5 - 9 | 1.24$ | 1.24$ |
10 - 24 | 1.18$ | 1.18$ |
25 - 49 | 1.11$ | 1.11$ |
50 - 99 | 1.09$ | 1.09$ |
100 - 199 | 1.06$ | 1.06$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 1.31$ | 1.31$ |
5 - 9 | 1.24$ | 1.24$ |
10 - 24 | 1.18$ | 1.18$ |
25 - 49 | 1.11$ | 1.11$ |
50 - 99 | 1.09$ | 1.09$ |
100 - 199 | 1.06$ | 1.06$ |
BYT56M. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 100 ns. Semiconductor material: silicon. Function: Very fast rectification and switching diode. Forward current (AV): 3A. IFSM: 80A. MRI (max): 150uA. MRI (min): 5uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: SOD-64 ( Glass ). Housing (according to data sheet): SOD-64 Glass. Operating temperature: -55...+175°C. Threshold voltage Vf (max): 1.4V. Forward voltage Vf (min): 1.4V. VRRM: 1000V. Number of terminals: 2. Quantity per case: 1. Conditioning unit: 2500. Spec info: IFSM--80Ap (t=10ms). Quantity in stock updated on 25/12/2024, 03:25.
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