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Semiconductors Transistors NPN bipolar transistors

NPN transistor, 12A, TO-3PF (SOT399, 2-16E3A), TO-3P(H)IS, 800V - BU2525DX

NPN transistor, 12A, TO-3PF (SOT399, 2-16E3A), TO-3P(H)IS, 800V - BU2525DX
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 3.07$ 3.07$
5 - 9 2.92$ 2.92$
10 - 24 2.83$ 2.83$
25 - 27 2.76$ 2.76$
Quantity U.P
1 - 4 3.07$ 3.07$
5 - 9 2.92$ 2.92$
10 - 24 2.83$ 2.83$
25 - 27 2.76$ 2.76$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 27
Set of 1

NPN transistor, 12A, TO-3PF (SOT399, 2-16E3A), TO-3P(H)IS, 800V - BU2525DX. NPN transistor, 12A, TO-3PF (SOT399, 2-16E3A), TO-3P(H)IS, 800V. Collector current: 12A. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): TO-3P(H)IS. Collector/emitter voltage Vceo: 800V. BE diode: no. Cost): 145pF. CE diode: yes. Quantity per case: 1. Semiconductor material: silicon. Function: CTV-HA Hi-re. Ic(pulse): 30A. Pd (Power Dissipation, Max): 45W. Assembly/installation: PCB through-hole mounting. Tf(max): 0.35us. Type of transistor: NPN. Vcbo: 1500V. Maximum saturation voltage VCE(sat): 1.1V. Original product from manufacturer Inchange Semiconductor. Quantity in stock updated on 07/06/2025, 22:25.

Technical documentation

Equivalent products :

Quantity in stock : 18
BU2527DX

BU2527DX

NPN transistor, 12A, TO-3PF (SOT399, 2-16E3A), SOT-399, 800V. Collector current: 12A. Housing: TO-3P...
BU2527DX
NPN transistor, 12A, TO-3PF (SOT399, 2-16E3A), SOT-399, 800V. Collector current: 12A. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): SOT-399. Collector/emitter voltage Vceo: 800V. Quantity per case: 1. Semiconductor material: silicon. Function: CRT-HA hi-re (F). Pd (Power Dissipation, Max): 45W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1500V
BU2527DX
NPN transistor, 12A, TO-3PF (SOT399, 2-16E3A), SOT-399, 800V. Collector current: 12A. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): SOT-399. Collector/emitter voltage Vceo: 800V. Quantity per case: 1. Semiconductor material: silicon. Function: CRT-HA hi-re (F). Pd (Power Dissipation, Max): 45W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1500V
Set of 1
2.59$ VAT incl.
(2.59$ excl. VAT)
2.59$
Quantity in stock : 7
2SC5696

2SC5696

NPN transistor, 12A, TO-3PF (SOT399, 2-16E3A), TO-3PMLH, 800V. Collector current: 12A. Housing: TO-3...
2SC5696
NPN transistor, 12A, TO-3PF (SOT399, 2-16E3A), TO-3PMLH, 800V. Collector current: 12A. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): TO-3PMLH. Collector/emitter voltage Vceo: 800V. BE resistor: yes. CE diode: yes. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: kHz. Function: High-Speed. Max hFE gain: 11. Minimum hFE gain: 3. Ic(pulse): 36A. Marking on the case: C5696. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 85W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Triple Diffused Planar Silicon Transistor'. Tf(max): 0.3us. Type of transistor: NPN. Vcbo: 1600V. Saturation voltage VCE(sat): 3V. Vebo: 5V
2SC5696
NPN transistor, 12A, TO-3PF (SOT399, 2-16E3A), TO-3PMLH, 800V. Collector current: 12A. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): TO-3PMLH. Collector/emitter voltage Vceo: 800V. BE resistor: yes. CE diode: yes. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: kHz. Function: High-Speed. Max hFE gain: 11. Minimum hFE gain: 3. Ic(pulse): 36A. Marking on the case: C5696. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 85W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Triple Diffused Planar Silicon Transistor'. Tf(max): 0.3us. Type of transistor: NPN. Vcbo: 1600V. Saturation voltage VCE(sat): 3V. Vebo: 5V
Set of 1
5.47$ VAT incl.
(5.47$ excl. VAT)
5.47$

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