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Semiconductors Transistors

BU2508AX

BU2508AX
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 3.73$ 3.73$
5 - 9 3.54$ 3.54$
10 - 11 3.36$ 3.36$
Quantity U.P
1 - 4 3.73$ 3.73$
5 - 9 3.54$ 3.54$
10 - 11 3.36$ 3.36$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 11
Set of 1

BU2508AX. Quantity per case: 1. Semiconductor material: silicon. Function: TV-HA. Collector current: 8A. Pd (Power Dissipation, Max): 45W. RoHS: yes. Type of transistor: NPN. Vcbo: 1500V. Collector/emitter voltage Vceo: 700V. Quantity in stock updated on 26/12/2024, 15:25.

Equivalent products :

Quantity in stock : 98
MD1802FX

MD1802FX

Cost): 1pF. Semiconductor material: silicon. Function: High Voltage Transistor for Standard Definiti...
MD1802FX
Cost): 1pF. Semiconductor material: silicon. Function: High Voltage Transistor for Standard Definition CRT. Max hFE gain: 8.5. Minimum hFE gain: 5.5. Collector current: 10A. Ic(pulse): 15A. Temperature: +150°C. Pd (Power Dissipation, Max): 57W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.2us. Housing (according to data sheet): ISOWATT218FX. Type of transistor: NPN. Vcbo: 700V. Saturation voltage VCE(sat): 1.5V. Collector/emitter voltage Vceo: 1500V. Vebo: 9V. Number of terminals: 3. Quantity per case: 1. Housing: TO-3PF (SOT399, 2-16E3A). BE diode: no. CE diode: no
MD1802FX
Cost): 1pF. Semiconductor material: silicon. Function: High Voltage Transistor for Standard Definition CRT. Max hFE gain: 8.5. Minimum hFE gain: 5.5. Collector current: 10A. Ic(pulse): 15A. Temperature: +150°C. Pd (Power Dissipation, Max): 57W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.2us. Housing (according to data sheet): ISOWATT218FX. Type of transistor: NPN. Vcbo: 700V. Saturation voltage VCE(sat): 1.5V. Collector/emitter voltage Vceo: 1500V. Vebo: 9V. Number of terminals: 3. Quantity per case: 1. Housing: TO-3PF (SOT399, 2-16E3A). BE diode: no. CE diode: no
Set of 1
2.92$ VAT incl.
(2.92$ excl. VAT)
2.92$
Quantity in stock : 44
KSD5703

KSD5703

Cost): 500pF. Quantity per case: 1. Semiconductor material: silicon. FT: kHz. Function: 'High Voltag...
KSD5703
Cost): 500pF. Quantity per case: 1. Semiconductor material: silicon. FT: kHz. Function: 'High Voltage Color Display Horizontal Deflection'. Max hFE gain: 40. Minimum hFE gain: 15. Collector current: 10A. Ic(pulse): 30A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 70W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.3us. Tf(min): 1us. Housing (according to data sheet): TO-3PF. Type of transistor: NPN. Vcbo: 1500V. Saturation voltage VCE(sat): 5V. Collector/emitter voltage Vceo: 800V. Vebo: 6V. Spec info: 0.1...0.3us. Housing: TO-3PF (SOT399, 2-16E3A)
KSD5703
Cost): 500pF. Quantity per case: 1. Semiconductor material: silicon. FT: kHz. Function: 'High Voltage Color Display Horizontal Deflection'. Max hFE gain: 40. Minimum hFE gain: 15. Collector current: 10A. Ic(pulse): 30A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 70W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.3us. Tf(min): 1us. Housing (according to data sheet): TO-3PF. Type of transistor: NPN. Vcbo: 1500V. Saturation voltage VCE(sat): 5V. Collector/emitter voltage Vceo: 800V. Vebo: 6V. Spec info: 0.1...0.3us. Housing: TO-3PF (SOT399, 2-16E3A)
Set of 1
3.55$ VAT incl.
(3.55$ excl. VAT)
3.55$
Quantity in stock : 779
FJAF6810A

FJAF6810A

Semiconductor material: silicon. Max hFE gain: 10. Minimum hFE gain: 5. Collector current: 10A. Ic(p...
FJAF6810A
Semiconductor material: silicon. Max hFE gain: 10. Minimum hFE gain: 5. Collector current: 10A. Ic(pulse): 20A. Marking on the case: J6810A. Pd (Power Dissipation, Max): 60W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf (type): 0.2us. Housing (according to data sheet): TO-3PF. Type of transistor: NPN. Vcbo: 1550V. Maximum saturation voltage VCE(sat): 3V. Collector/emitter voltage Vceo: 750V. Vebo: 6V. Quantity per case: 1. Function: High-speed switching. Housing: TO-3PF (SOT399, 2-16E3A). BE diode: no. CE diode: no
FJAF6810A
Semiconductor material: silicon. Max hFE gain: 10. Minimum hFE gain: 5. Collector current: 10A. Ic(pulse): 20A. Marking on the case: J6810A. Pd (Power Dissipation, Max): 60W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf (type): 0.2us. Housing (according to data sheet): TO-3PF. Type of transistor: NPN. Vcbo: 1550V. Maximum saturation voltage VCE(sat): 3V. Collector/emitter voltage Vceo: 750V. Vebo: 6V. Quantity per case: 1. Function: High-speed switching. Housing: TO-3PF (SOT399, 2-16E3A). BE diode: no. CE diode: no
Set of 1
1.40$ VAT incl.
(1.40$ excl. VAT)
1.40$

We also recommend :

Quantity in stock : 325
2SC5793

2SC5793

Quantity per case: 1. Semiconductor material: silicon. Function: Ultrahigh-Definition CRT Display Ho...
2SC5793
[LONGDESCRIPTION]
2SC5793
[LONGDESCRIPTION]
[MODCATID]
[LOT]
3.99$ VAT incl.
(3.99$ excl. VAT)
3.99$
Quantity in stock : 71
TT2206

TT2206

Cost): 80pF. Semiconductor material: silicon. Collector current: 10A. Pd (Power Dissipation, Max): 6...
TT2206
[LONGDESCRIPTION]
TT2206
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[MODCATID]
[LOT]
5.11$ VAT incl.
(5.11$ excl. VAT)
5.11$
Quantity in stock : 1
KA3S1265RD

KA3S1265RD

Note: current limitation 8A. Note: oscillator frequency 20kHz. Note: Rds(on) 0.72 Ohms...
KA3S1265RD
[LONGDESCRIPTION]
KA3S1265RD
[LONGDESCRIPTION]
[MODCATID]
[LOT]
18.48$ VAT incl.
(18.48$ excl. VAT)
18.48$
Quantity in stock : 1
LA7845

LA7845

Note: I2p-p--2.2A. Number of terminals: 7. Pd (Power Dissipation, Max): 11W. Assembly/installation: ...
LA7845
[LONGDESCRIPTION]
LA7845
[LONGDESCRIPTION]
[MODCATID]
[LOT]
3.76$ VAT incl.
(3.76$ excl. VAT)
3.76$

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