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10 - 24 | 0.68$ | 0.68$ |
25 - 41 | 0.64$ | 0.64$ |
BD646. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 7 MHz. Function: NF-L. Max hFE gain: 1500. Minimum hFE gain: 750. Collector current: 8A. Ic(pulse): 12A. Number of terminals: 3. Pd (Power Dissipation, Max): 62.5W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 60V. Saturation voltage VCE(sat): 2V. Collector/emitter voltage Vceo: 60V. Vebo: 5V. Spec info: Be--R1 (10k Ohms), R2 (750 Ohms). Quantity in stock updated on 04/01/2025, 10:25.
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