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3JU41

3JU41
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Quantity excl. VAT VAT incl.
1 - 4 0.83$ 0.83$
5 - 9 0.79$ 0.79$
10 - 21 0.75$ 0.75$
Quantity U.P
1 - 4 0.83$ 0.83$
5 - 9 0.79$ 0.79$
10 - 21 0.75$ 0.75$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 21
Set of 1

3JU41. Dielectric structure: Anode-Cathode. Diode Tff(25°C): 200 ns. Trr Diode (Min.): 100 ns. Semiconductor material: silicon. Forward current (AV): 3A. Note: HIGH Speed Rectifier, (Fast Recovery). MRI (max): 100uA. Marking on the case: 3JU. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): DO-201AD 8x6mm. Threshold voltage Vf (max): 2V. VRRM: 600V. Quantity in stock updated on 24/12/2024, 17:25.

Equivalent products :

Quantity in stock : 4575
UF5408

UF5408

RoHS: yes. Component family: Fast rectifier diode (tr<500ns). Housing: PCB soldering. Housing: DO-20...
UF5408
RoHS: yes. Component family: Fast rectifier diode (tr<500ns). Housing: PCB soldering. Housing: DO-201. Housing (JEDEC standard): silicon. Configuration: PCB through-hole mounting. Number of terminals: 2. Forward current [A]: 3A. Ifsm [A]: 60.4k Ohms. Close voltage (repetitive) Vrrm [V]: 1 kV. Leakage current on closing Ir [A]: 5uA..50uA. Switching speed (regeneration time) tr [sec.]: 75 ns. Threshold voltage Vf (max): 1.7V. Forward voltage Vf (min): 1.7V. VRRM: 800V. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +175°C. Forward voltage Vfmax (V): 1.7V @ 3A
UF5408
RoHS: yes. Component family: Fast rectifier diode (tr<500ns). Housing: PCB soldering. Housing: DO-201. Housing (JEDEC standard): silicon. Configuration: PCB through-hole mounting. Number of terminals: 2. Forward current [A]: 3A. Ifsm [A]: 60.4k Ohms. Close voltage (repetitive) Vrrm [V]: 1 kV. Leakage current on closing Ir [A]: 5uA..50uA. Switching speed (regeneration time) tr [sec.]: 75 ns. Threshold voltage Vf (max): 1.7V. Forward voltage Vf (min): 1.7V. VRRM: 800V. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +175°C. Forward voltage Vfmax (V): 1.7V @ 3A
Set of 1
0.19$ VAT incl.
(0.19$ excl. VAT)
0.19$
Quantity in stock : 80
31DF6

31DF6

Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 35 ns. Semiconductor ma...
31DF6
Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 35 ns. Semiconductor material: silicon. Function: Ultra-Fast Recovery. Forward current (AV): 3A. IFSM: 45A. MRI (max): 100uA. MRI (min): 20uA. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): DO-201AD ( 5.6x10mm ). Operating temperature: -40...+150°C. Threshold voltage Vf (max): 1.7V. Forward voltage Vf (min): 1.7V. VRRM: 600V
31DF6
Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 35 ns. Semiconductor material: silicon. Function: Ultra-Fast Recovery. Forward current (AV): 3A. IFSM: 45A. MRI (max): 100uA. MRI (min): 20uA. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): DO-201AD ( 5.6x10mm ). Operating temperature: -40...+150°C. Threshold voltage Vf (max): 1.7V. Forward voltage Vf (min): 1.7V. VRRM: 600V
Set of 1
2.34$ VAT incl.
(2.34$ excl. VAT)
2.34$
Quantity in stock : 100
UF3005M

UF3005M

Cj: 50pF. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 75 ns. Semiconductor material: sili...
UF3005M
Cj: 50pF. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 75 ns. Semiconductor material: silicon. Function: Ultra fast switching. Forward current (AV): 3A. IFSM: 150A. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): DO-201AD ( 8.8x5.1mm ). Operating temperature: -55...+125°C. Threshold voltage Vf (max): 1.7V. Forward voltage Vf (min): 1.7V. VRRM: 600V. Number of terminals: 2. Quantity per case: 1. Spec info: Ifsm 150Ap t=8.2ms
UF3005M
Cj: 50pF. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 75 ns. Semiconductor material: silicon. Function: Ultra fast switching. Forward current (AV): 3A. IFSM: 150A. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): DO-201AD ( 8.8x5.1mm ). Operating temperature: -55...+125°C. Threshold voltage Vf (max): 1.7V. Forward voltage Vf (min): 1.7V. VRRM: 600V. Number of terminals: 2. Quantity per case: 1. Spec info: Ifsm 150Ap t=8.2ms
Set of 1
0.91$ VAT incl.
(0.91$ excl. VAT)
0.91$
Quantity in stock : 199
BYT56M

BYT56M

Dielectric structure: Anode-Cathode. Trr Diode (Min.): 100 ns. Semiconductor material: silicon. Func...
BYT56M
Dielectric structure: Anode-Cathode. Trr Diode (Min.): 100 ns. Semiconductor material: silicon. Function: Very fast rectification and switching diode. Forward current (AV): 3A. IFSM: 80A. MRI (max): 150uA. MRI (min): 5uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: SOD-64 ( Glass ). Housing (according to data sheet): SOD-64 Glass. Operating temperature: -55...+175°C. Threshold voltage Vf (max): 1.4V. Forward voltage Vf (min): 1.4V. VRRM: 1000V. Number of terminals: 2. Quantity per case: 1. Conditioning unit: 2500. Spec info: IFSM--80Ap (t=10ms)
BYT56M
Dielectric structure: Anode-Cathode. Trr Diode (Min.): 100 ns. Semiconductor material: silicon. Function: Very fast rectification and switching diode. Forward current (AV): 3A. IFSM: 80A. MRI (max): 150uA. MRI (min): 5uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: SOD-64 ( Glass ). Housing (according to data sheet): SOD-64 Glass. Operating temperature: -55...+175°C. Threshold voltage Vf (max): 1.4V. Forward voltage Vf (min): 1.4V. VRRM: 1000V. Number of terminals: 2. Quantity per case: 1. Conditioning unit: 2500. Spec info: IFSM--80Ap (t=10ms)
Set of 1
1.31$ VAT incl.
(1.31$ excl. VAT)
1.31$

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BYV26E

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Cj: 40pF. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 75 ns. Semiconductor material: sili...
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FR207

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Cj: 30pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 500 ns. Semic...
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BY133

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1N5062

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BYW56

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Cj: 50pF. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 4us. Semiconductor material: silico...
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